Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers

Published 2019 View Full Article

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Title
Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 5, Pages 714-717
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-03-08
DOI
10.1109/led.2019.2903641

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