Kinetic pathway of the ferroelectric phase formation in doped HfO2 films
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Title
Kinetic pathway of the ferroelectric phase formation in doped HfO2 films
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 122, Issue 12, Pages 124104
Publisher
AIP Publishing
Online
2017-09-25
DOI
10.1063/1.5003918
References
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Related references
Note: Only part of the references are listed.- An extensive study of the influence of dopants on the ferroelectric properties of HfO2
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- On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film
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- (2014) Tran Doan Huan et al. PHYSICAL REVIEW B
- From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices
- (2013) Stefan Mueller et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
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- Ferroelectricity in Simple Binary ZrO2 and HfO2
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- (2012) Ekaterina Yurchuk et al. THIN SOLID FILMS
- Ferroelectricity in Gd-Doped HfO2Thin Films
- (2012) S. Mueller et al. ECS Journal of Solid State Science and Technology
- Phase transitions in ferroelectric silicon doped hafnium oxide
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- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
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- Development of hafnium based high-k materials—A review
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- Stabilization of the high-k tetragonal phase in HfO2: The influence of dopants and temperature from ab initio simulations
- (2008) Dominik Fischer et al. JOURNAL OF APPLIED PHYSICS
- First-principles study on doping and phase stability ofHfO2
- (2008) Choong-Ki Lee et al. PHYSICAL REVIEW B
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
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