Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

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Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element

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A million spiking-neuron integrated circuit with a scalable communication network and interface

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HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

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Logic Computation in Phase Change Materials by Threshold and Memory Switching

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The parallel approach

(2013) Massimiliano Di Ventra et al.   Nature Physics

Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

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Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

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The future of microprocessors

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Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

The missing memristor found

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Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology