Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

Title
Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 8, Pages 1193-1196
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-06-12
DOI
10.1109/led.2020.3001639

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now