Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications

(2019) K.-T. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers

(2019) Wenwu Xiao et al.   IEEE ELECTRON DEVICE LETTERS

Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors

(2018) Halid Mulaosmanovic et al.   ACS Applied Materials & Interfaces

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

(2018) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors

(2018) Jiuren Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

(2016) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

(2015) M. H. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

(2014) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

(2012) Johannes Muller et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY