Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer

Published 2021 View Full Article

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Title
Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 6, Pages 835-838
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-04-21
DOI
10.1109/led.2021.3074434

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