Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

Normally-off Hydrogen-terminated Diamond Field Effect Transistor with Yttrium Gate

(2021) Minghui Zhang et al.   CARBON

Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer

(2021) N. Zhang et al.   OPTICS EXPRESS

High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

(2021) Hao Xue et al.   Physica Status Solidi-Rapid Research Letters

Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

(2021) Chenlu Wang et al.   IEEE ELECTRON DEVICE LETTERS

Heteroepitaxial Diamond Growth from the Gas Phase: Problems and Prospects (Review)

(2021) S. A. Linnik et al.   INSTRUMENTS AND EXPERIMENTAL TECHNIQUES

Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs

(2021) Martin Guttmann et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

(2021) Qing Cai et al.   Light-Science & Applications

Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect

(2021) Dongyang Han et al.   APPLIED PHYSICS LETTERS

345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond

(2021) Niloy Chandra Saha et al.   IEEE ELECTRON DEVICE LETTERS

β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm

(2021) Nidhin Kurian Kalarickal et al.   IEEE ELECTRON DEVICE LETTERS

Low ON-Resistance (2.5 mΩ · cm2) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure

(2021) Jun Tsunoda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability

(2021) Ming Xiao et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

(2020) Pramod Reddy et al.   APPLIED PHYSICS LETTERS

650 mW/mm output power density of H-terminated polycrystalline diamond MISFET at 10 GHz

(2020) Cui Yu et al.   ELECTRONICS LETTERS

Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode With Improved On-Current and Ideality Factor

(2020) Yanni Zhang et al.   IEEE ELECTRON DEVICE LETTERS

1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2

(2020) Xing Lu et al.   IEEE ELECTRON DEVICE LETTERS

Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer

(2020) Muhammad Usman et al.   SUPERLATTICES AND MICROSTRUCTURES

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga 2 O 3 Thin‐Film Transistors

(2020) Zuyin Han et al.   Advanced Optical Materials

Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

(2020) Yuan Qin et al.   ACS Photonics

AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates

(2020) Burhan K. SaifAddin et al.   ACS Photonics

High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes

(2020) A. Pandey et al.   Photonics Research

Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes

(2020) Ping Wang et al.   APPLIED PHYSICS LETTERS

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

(2020) Ekaterine Chikoidze et al.   CRYSTAL GROWTH & DESIGN

Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm

(2020) Hao Xue et al.   IEEE ELECTRON DEVICE LETTERS

Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2

(2020) Yuanjie Lv et al.   IEEE ELECTRON DEVICE LETTERS

An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material

(2020) Wei Wang et al.   IEEE ELECTRON DEVICE LETTERS

A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode

(2020) H. H. Gong et al.   APPLIED PHYSICS LETTERS

Electrical and optical properties of degenerate and semi-insulating ZnGa2O4: Electron/phonon scattering elucidated by quantum magnetoconductivity

(2020) David C. Look et al.   APPLIED PHYSICS LETTERS

Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

(2020) Shivam Sharma et al.   IEEE ELECTRON DEVICE LETTERS

Improving hole injection from p-EBL down to the end of active region by simply playing with polarization effect for AlGaN based DUV light-emitting diodes

(2020) Danyang Zhang et al.   AIP Advances

Polarization Enhanced AlGaN Solar-Blind Ultraviolet Detectors

(2020) Ke Jiang et al.   Photonics Research

Oxygen annealing impact on β-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

(2020) Yuanjie Lv et al.   APPLIED PHYSICS LETTERS

Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

(2020) Neil A. Moser et al.   IEEE ELECTRON DEVICE LETTERS

Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

(2020) Carlo De Santi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

(Ultra)Wide-Bandgap Vertical Power FinFETs

(2020) Yuhao Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Pd nanoparticle size effects in localized surface plasmon-enhanced diamond photodetectors

(2020) Xiaohui Chang et al.   OPTICAL MATERIALS

An AlGaN tunnel junction light emitting diode operating at 255 nm

(2020) A. Pandey et al.   APPLIED PHYSICS LETTERS

A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors

(2020) Young Tack Lee et al.   APPLIED PHYSICS LETTERS

High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process

(2020) Zhe Li et al.   IEEE ELECTRON DEVICE LETTERS

Enhanced Responsivity of Diamond UV Detector Based on Regrown Lens Structure

(2020) Zhangcheng Liu et al.   IEEE ELECTRON DEVICE LETTERS

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

(2020) Linlin Shi et al.   Laser & Photonics Reviews

ZnGa2O4 deep-ultraviolet photodetector based on Si substrate

(2020) Wanmin Lin et al.   MATERIALS LETTERS

Epitaxial growth of polarization-graded AlGaN-based solar-blind ultraviolet photodetectors on pre-grown AlN templates

(2020) Yiren Chen et al.   MATERIALS LETTERS

Investigation of AlGaN channel Schottky barrier diode on silicon substrate with Molybdenum anode

(2020) Tao Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates

(2020) Ryota Ishii et al.   AIP Advances

Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer

(2020) Zeyang Ren et al.   Results in Physics

Solar-blind imaging based on 2-inch polycrystalline diamond photodetector linear array

(2020) Zhenfeng Zhang et al.   CARBON

Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application

(2020) Chao Xie et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

(2019) Zi-Hui Zhang et al.   Photonics Research

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

(2019) Meiyong Liao et al.   Advanced Electronic Materials

Bright Luminescence from Indirect and Strongly Bound Excitons in h-BN

(2019) Léonard Schué et al.   PHYSICAL REVIEW LETTERS

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

(2019) Michael Kneissl et al.   Nature Photonics

Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

(2019) Brianna A. Klein et al.   APPLIED PHYSICS LETTERS

Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga2O3 Single Crystals

(2019) Xuanhu Chen et al.   ACS Applied Materials & Interfaces

Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

(2019) Zhaolong Chen et al.   ADVANCED MATERIALS

Enhancement-Mode $\beta$ -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio

(2019) Yuan Qin et al.   IEEE ELECTRON DEVICE LETTERS

Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm

(2019) Martin Guttmann et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Self-powered diamond ultraviolet photodetector with a transparent Ag nanowire electrode

(2019) F N Li et al.   NANOTECHNOLOGY

On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer

(2019) Chunshuang Chu et al.   OPTICS EXPRESS

Application of back bias to interdigital-electrode structured diamond UV detector showing enhanced responsivity

(2019) Kang Liu et al.   SENSORS AND ACTUATORS A-PHYSICAL

Photovoltaic Three-Dimensional Diamond UV Photodetector With Low Dark Current and Fast Response Speed Fabricated by Bottom-Up Method

(2019) Zhangcheng Liu et al.   IEEE ELECTRON DEVICE LETTERS

$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

(2019) Zhanbo Xia et al.   IEEE ELECTRON DEVICE LETTERS

Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency

(2019) Anisha Kalra et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template

(2019) Ruxue Ni et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Avalanche Gain in Metal–Semiconductor–Metal Ga2O3 Solar-Blind Photodiodes

(2019) Baoshi Qiao et al.   Journal of Physical Chemistry C

Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

(2019) Qing Cai et al.   IEEE Photonics Journal

Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging

(2019) Yuan Qin et al.   Advanced Electronic Materials

Photonics with hexagonal boron nitride

(2019) Joshua D. Caldwell et al.   Nature Reviews Materials

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

(2019) Haiding Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Iridium size effects in localized surface plasmon-enhanced diamond UV photodetectors

(2019) Xiaohui Chang et al.   APPLIED SURFACE SCIENCE

Lateral 1.8 kV $\beta$ -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit

(2019) Kornelius Tetzner et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes

(2019) Yuan Qin et al.   IEEE ELECTRON DEVICE LETTERS

Ultrahigh-Performance Solar-Blind Photodetector Based on $\alpha$ -Phase- Dominated Ga2O3 Film With Record Low Dark Current of 81 fA

(2019) Xiaohu Hou et al.   IEEE ELECTRON DEVICE LETTERS

Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer

(2019) J. Lang et al.   OPTICS EXPRESS

Self-powered solar-blind ultraviolet photodetector based on Au/ZnMgO/ZnO:Al with comb-shaped Schottky electrode

(2019) Changqi Zhou et al.   SENSORS AND ACTUATORS A-PHYSICAL

Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array

(2019) Liang Zhang et al.   Photonics Research

High-Temperature $\beta$ -Ga2O3 Schottky Diodes and UVC Photodetectors Using RuOx Contacts

(2019) Caixia Hou et al.   IEEE ELECTRON DEVICE LETTERS

High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

(2019) Jiangwei Liu et al.   IEEE ELECTRON DEVICE LETTERS

Diamond based photodetectors for solar-blind communication

(2019) ChaoNan Lin et al.   OPTICS EXPRESS

Smart Wide‐Bandgap Omnidirectional Reflector as an Effective Hole‐Injection Electrode for Deep‐UV Light‐Emitting Diodes

(2019) Tae Ho Lee et al.   Advanced Optical Materials

Fabrication of High Power Deep Ultraviolet Light-Emitting Diodes with Glass Lenses Using Atomic Diffusion Bonding

(2019) M. Ichikawa et al.   ECS Journal of Solid State Science and Technology

Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy

(2019) Sahadeb Ghosh et al.   APPLIED PHYSICS LETTERS

Deep-ultraviolet Schottky photodetectors with high deep-ultraviolet/visible rejection based on a ZnGa2O4 thin film

(2019) Si-Han Tsai et al.   APPLIED SURFACE SCIENCE

Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency

(2019) Walter Shin et al.   OPTICS EXPRESS

Enhancement‐Mode β ‐Ga 2 O 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

(2019) Yuanjie Lv et al.   Physica Status Solidi-Rapid Research Letters

Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

(2019) Hongpeng Zhang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Vacuum-Ultraviolet Photovoltaic Detector

(2018) Wei Zheng et al.   ACS Nano

Impact of UV spot position on forward and reverse photocurrent symmetry in a gold-diamond-gold detector

(2018) Kang Liu et al.   APPLIED PHYSICS LETTERS

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

UV-photodetector based on NiO/diamond film

(2018) Xiaohui Chang et al.   APPLIED PHYSICS LETTERS

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

(2018) Norman Susilo et al.   APPLIED PHYSICS LETTERS

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

(2018) Cheng Liu et al.   APPLIED PHYSICS LETTERS

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

(2018) Dong Liu et al.   APPLIED PHYSICS LETTERS

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

(2018) Dong Liu et al.   APPLIED PHYSICS LETTERS

Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

(2018) L. Hahn et al.   APPLIED PHYSICS LETTERS

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

(2018) Kelson D. Chabak et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

(2018) Zongyang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Arrays of Solar-Blind Ultraviolet Photodetector Based on $\beta$ -Ga2O3 Epitaxial Thin Films

(2018) Yangke Peng et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

(2018) Noritoshi Maeda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

AlN metal–semiconductor field-effect transistors using Si-ion implantation

(2018) Hironori Okumura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

(2018) Fabrizio Roccaforte et al.   MICROELECTRONIC ENGINEERING

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

(2018) Zi-Hui Zhang et al.   Nanoscale Research Letters

Responsivity improvement of Ti–diamond–Ti structured UV photodetector through photocurrent gain

(2018) Zhangcheng Liu et al.   OPTICS EXPRESS

On the Al x Ga 1-x N/Al y Ga 1-y N/Al x Ga 1-x N (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

(2018) Chunshuang Chu et al.   SUPERLATTICES AND MICROSTRUCTURES

Controlling responsivity depends on change of interdigital electrodes in planar MgZnO UV photodetectors

(2018) Wei Zhang et al.   SUPERLATTICES AND MICROSTRUCTURES

Diamond-Based All-Carbon Photodetectors for Solar-Blind Imaging

(2018) Chao-Nan Lin et al.   Advanced Optical Materials

Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging

(2018) Yan-Cheng Chen et al.   Journal of Materials Chemistry C

The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD

(2018) Yiren Chen et al.   Journal of Materials Chemistry C

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

(2018) Zi-Hui Zhang et al.   Nanoscale Research Letters

Ultrahigh Performance of Self-Powered β-Ga2O3 Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer

(2018) Kanika Arora et al.   ACS Photonics

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

(2018) D. Alden et al.   Physical Review Applied

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

(2018) Zongyang Hu et al.   APPLIED PHYSICS LETTERS

AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure

(2018) Q. Cai et al.   APPLIED PHYSICS LETTERS

A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_\text{T/{f}_{\max}$ of 70/80 GHz

(2018) Xinxin Yu et al.   IEEE ELECTRON DEVICE LETTERS

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

(2018) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts

(2018) Xuhong Hu et al.   IEEE ELECTRON DEVICE LETTERS

Ga2O3 field-effect-transistor-based solar-blind photodetector with fast response and high photo-to-dark current ratio

(2018) Yaxuan Liu et al.   IEEE ELECTRON DEVICE LETTERS

The Figure of Merit of a Semiconductor Power Electronics Switch

(2018) Krishna Shenai   IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 Thin Films

(2018) Si-Han Tsai et al.   Scientific Reports

Optoelectronic Diamond: Growth, Properties, and Photodetection Applications

(2018) Ying-Jie Lu et al.   Advanced Optical Materials

Enhanced ultraviolet absorption in diamond surface via localized surface plasmon resonance in palladium nanoparticles

(2018) Xiaohui Chang et al.   APPLIED SURFACE SCIENCE

MBE-Grown $\beta$ -Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107

(2018) Anamika Singh Pratiyush et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template

(2018) M. Ajmal Khan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhanced ultraviolet photoresponse of diamond photodetector using patterned diamond film and two-step growth process

(2018) Zhangcheng Liu et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals

(2018) Zbigniew Galazka et al.   APL Materials

3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

(2018) Shoichiro Imanishi et al.   IEEE ELECTRON DEVICE LETTERS

Effect of step-graded superlattice electron blocking layer on performance of AlGaN based deep-UV light emitting diodes

(2018) Ramit Kumar Mondal et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

(2017) Yuya Kitabayashi et al.   IEEE ELECTRON DEVICE LETTERS

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

(2017) Neil Moser et al.   IEEE ELECTRON DEVICE LETTERS

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

(2017) Z. G. Shao et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

(2017) Houqiang Fu et al.   IEEE ELECTRON DEVICE LETTERS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes

(2017) Hyun Kyong Cho et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

(2017) Michiko Kaneda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method

(2017) S. Han et al.   JOURNAL OF ALLOYS AND COMPOUNDS

High quality crystal growth and anisotropic physical characterization of β -Ga 2 O 3 single crystals grown by EFG method

(2017) Wenxiang Mu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Ab initio velocity-field curves in monoclinic β-Ga2O3

(2017) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

(2017) Shashwat Rathkanthiwar et al.   JOURNAL OF APPLIED PHYSICS

Photoelectrical characteristics of ultra thin TiO 2 /diamond photodetector

(2017) Zhangcheng Liu et al.   MATERIALS LETTERS

Mg-doped p -type β- Ga 2 O 3 thin film for solar-blind ultraviolet photodetector

(2017) Y.P. Qian et al.   MATERIALS LETTERS

Single crystal diamond UV detector with a groove-shaped electrode structure and enhanced sensitivity

(2017) Kang Liu et al.   SENSORS AND ACTUATORS A-PHYSICAL

A Solar-Blind UV Detector Based on Graphene-Microcrystalline Diamond Heterojunctions

(2017) Minsong Wei et al.   Small

A survey of Gallium Nitride HEMT for RF and high power applications

(2017) A.S. Augustine Fletcher et al.   SUPERLATTICES AND MICROSTRUCTURES

Preparation and enhanced photocatalytic hydrogen-evolution activity of ZnGa2O4/N-rGO heterostructures

(2017) X. P. Bai et al.   RSC Advances

Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

(2017) Matthias Schreck et al.   Scientific Reports

Room-Temperature Fabricated Amorphous Ga2 O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates

(2017) Shujuan Cui et al.   Advanced Optical Materials

Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

(2017) Peigang Li et al.   Journal of Materials Chemistry C

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET

(2017) Takayuki Iwasaki et al.   IEEE Journal of the Electron Devices Society

Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction

(2016) Xing Chen et al.   ACS Applied Materials & Interfaces

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

β -Ga 2 O 3 / p -Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity

(2016) X.C. Guo et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

(2016) K. Hoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

(2016) Zbigniew Galazka et al.   ECS Journal of Solid State Science and Technology

Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength

(2015) Ming-Ming Fan et al.   ACS Applied Materials & Interfaces

Demonstration of solar-blind AlxGa1−xN-based heterojunction phototransistors

(2015) Lingxia Zhang et al.   APPLIED PHYSICS LETTERS

High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

(2015) Wei Zhang et al.   APPLIED PHYSICS LETTERS

Anisotropic thermal conductivity in single crystal β-gallium oxide

(2015) Zhi Guo et al.   APPLIED PHYSICS LETTERS

Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO

(2015) Xiuhua Xie et al.   OPTICS EXPRESS

Development of solar-blind photodetectors based on Si-implanted β-Ga_2O_3

(2015) Sooyeoun Oh et al.   OPTICS EXPRESS

p-type doping of MgZnO films and their applications in optoelectronic devices

(2015) C. X. Shan et al.   OPTICS LETTERS

Suppression of photocatalysis and long-lasting luminescence in ZnGa2O4 by Cr3+ doping

(2015) Lei Li et al.   RSC Advances

Realization of cubic ZnMgO photodetectors for UVB applications

(2015) Ming-Ming Fan et al.   Journal of Materials Chemistry C

Zr/oxidized diamond interface for high power Schottky diodes

(2014) A. Traoré et al.   APPLIED PHYSICS LETTERS

A 2-in. mosaic wafer made of a single-crystal diamond

(2014) H. Yamada et al.   APPLIED PHYSICS LETTERS

High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film

(2014) M. M. Fan et al.   APPLIED PHYSICS LETTERS

One-pot synthesis of ZnO/ZnGa2O4 heterojunction with X/XY structure for improved photocatalytic activity

(2014) Ma Baojun et al.   APPLIED SURFACE SCIENCE

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

(2014) N. Yafune et al.   ELECTRONICS LETTERS

600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$

(2014) Takayuki Iwasaki et al.   IEEE ELECTRON DEVICE LETTERS

Carrier transport in homoepitaxial diamond films with heavy phosphorus doping

(2014) Tsubasa Matsumoto et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures

(2013) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

(2013) E. Cicek et al.   APPLIED PHYSICS LETTERS

Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base

(2013) Hiromitsu Kato et al.   DIAMOND AND RELATED MATERIALS

Rock-salt Zn1−xMgxO epilayer having high Zn content grown on MgO (100) substrate by plasma-assisted molecular beam epitaxy

(2013) C.-Y.J. Lu et al.   JOURNAL OF CRYSTAL GROWTH

First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?

(2013) L. Lindsay et al.   PHYSICAL REVIEW LETTERS

Doping and electrical properties of cubic boron nitride thin films: A critical review

(2013) X.W. Zhang   THIN SOLID FILMS

Diamond bipolar junction transistor device with phosphorus-doped diamond base layer

(2012) Hiromitsu Kato et al.   DIAMOND AND RELATED MATERIALS

Progress in focal plane array technologies

(2012) Antoni Rogalski   PROGRESS IN QUANTUM ELECTRONICS

AlGaN-on-Si-Based 10-$\mu\hbox{m}$ Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range

(2011) Pawel E. Malinowski et al.   IEEE ELECTRON DEVICE LETTERS

Growth of single-phase Mg0.3Zn0.7O films suitable for solar-blind optical devices on RS-MgO substrates

(2011) H.L. Liang et al.   THIN SOLID FILMS

Extreme dielectric strength in boron doped homoepitaxial diamond

(2010) Pierre-Nicolas Volpe et al.   APPLIED PHYSICS LETTERS

Ab Initio Study Of Double Oxides ZnX2O4 (X=Al, Ga, In) Having Spinel Structure

(2010) Smagul Zh. Karazhanov et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Diamond Schottky-pn diode without trade-off relationship between on-resistance and blocking voltage

(2010) Toshiharu Makino et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

ZnO-Based Ultraviolet Photodetectors

(2010) Kewei Liu et al.   SENSORS

Diamond Schottky-pn diode with high forward current density and fast switching operation

(2009) Toshiharu Makino et al.   APPLIED PHYSICS LETTERS

High quality AlN for deep UV photodetectors

(2009) S. Nikishin et al.   APPLIED PHYSICS LETTERS

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

(2009) S.L. Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

Solar-blind 4.55eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers

(2009) Z.L. Liu et al.   JOURNAL OF CRYSTAL GROWTH

Low specific contact resistance of heavily phosphorus-doped diamond film

(2008) Hiromitsu Kato et al.   APPLIED PHYSICS LETTERS

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

(2008) Harumasa Yoshida et al.   APPLIED PHYSICS LETTERS

Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD

(2008) S.V. Averine et al.   SOLID-STATE ELECTRONICS