Journal
RESULTS IN PHYSICS
Volume 20, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.rinp.2020.103760
Keywords
Diamond; Normally-off; MoO3; MESFET; High temperature
Funding
- National Key Research and Development Program of China [2018YFB0406504]
- National Natural Science Foundation of China [61874080, 62004148]
- Natural Science Basic Research Program of Shaanxi [2020JQ-315]
- Fundamental Research Funds for the Central Universities [XJS201101]
- National Postdoctoral Program for Innovative Talents [BX20190263]
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The study successfully fabricated MoO3 passivated diamond MESFETs and found that the device can operate normally below 150 degrees Celsius.
The normally-off hydrogen-terminated diamond metal-semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate. The characteristics of the device at room temperature and 100 degrees C, 150 degrees C and 200 degrees C were investigated. The device with a 2-mu m gate shows a threshold voltage of -0.38 V, the maximum output current of 35 mA/mm and the transconductance of 17.4 mS/mm. The device can still work normally until 150 degrees C, which shows great potential to be used in high temperature in the future.
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