The emergence and prospects of deep-ultraviolet light-emitting diode technologies

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

(2018) Norman Susilo et al.   APPLIED PHYSICS LETTERS

226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

(2018) Dong Liu et al.   APPLIED PHYSICS LETTERS

High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content

(2018) Kazuaki Ebata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Degradation effects of the active region in UV-C light-emitting diodes

(2018) Johannes Glaab et al.   JOURNAL OF APPLIED PHYSICS

Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes

(2018) Jih-Yuan Chang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD

(2018) Hanling Long et al.   OPTICS EXPRESS

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

(2018) Yosuke Nagasawa et al.   Applied Sciences-Basel

Investigation on Thermal Characterization of Eutectic Flip-Chip UV-LEDs With Different Bonding Voidage

(2017) Renli Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

(2017) Michiko Kaneda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN layer

(2017) Joosun Yun et al.   JOURNAL OF APPLIED PHYSICS

Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters

(2017) Semi Oh et al.   Nanoscale

High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

(2017) Chia-Yen Huang et al.   AIP Advances

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

(2017) Kai Ding et al.   Crystals

Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

(2016) Hideto Miyake et al.   Applied Physics Express

Controlling a three dimensional electron slab of graded AlxGa1−xN

(2016) R. Adhikari et al.   APPLIED PHYSICS LETTERS

Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices

(2016) C. Hartmann et al.   CRYSTENGCOMM

Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate

(2016) Hongwei Liang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Localized Surface Plasmon-Enhanced Deep-UV Light-Emitting Diodes with Al/Al2O3 Asymmetrical Nanoparticles

(2016) Jin Wang et al.   Plasmonics

Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

(2015) Christoph Reich et al.   APPLIED PHYSICS LETTERS

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

(2015) Gunnar Kusch et al.   APPLIED PHYSICS LETTERS

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

(2015) Zachary Bryan et al.   APPLIED PHYSICS LETTERS

Interband tunneling for hole injection in III-nitride ultraviolet emitters

(2015) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Thermal Analysis of Eutectic Flip-Chip Light-Emitting Diodes Fabricated Using Copper-Coated Ceramic Substrate

(2015) Chien-Ping Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet

(2015) Jinwan Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

(2015) Jianchang Yan et al.   JOURNAL OF CRYSTAL GROWTH

Crack-free Si-doped n-AlGaN film grown on sapphire substrate with high-temperature AlN interlayer

(2015) Shuchang Wang et al.   OPTIK

Stable and metastable Si negative-U centers in AlGaN and AlN

(2014) Xuan Thang Trinh et al.   APPLIED PHYSICS LETTERS

Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

(2014) J. J. Wierer et al.   APPLIED PHYSICS LETTERS

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

(2014) Frank Mehnke et al.   APPLIED PHYSICS LETTERS

Hybrid functional calculations ofDXcenters in AlN and GaN

(2014) L. Gordon et al.   PHYSICAL REVIEW B

Bulk AlN growth by physical vapour transport

(2014) C Hartmann et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics

(2014) A Fujioka et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate

(2014) B. C. Lin et al.   Optical Materials Express

270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

(2013) James R. Grandusky et al.   Applied Physics Express

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

(2013) Toru Kinoshita et al.   Applied Physics Express

Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes

(2013) Han-Youl Ryu et al.   Applied Physics Express

High p-type conduction in high-Al content Mg-doped AlGaN

(2013) Toru Kinoshita et al.   APPLIED PHYSICS LETTERS

Ge doped GaN with controllable high carrier concentration for plasmonic applications

(2013) Ronny Kirste et al.   APPLIED PHYSICS LETTERS

Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

(2013) Frank Mehnke et al.   APPLIED PHYSICS LETTERS

Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays

(2013) N. Lobo Ploch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

(2013) Tetsuhiko Inazu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes

(2013) Tsubasa Nakashima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

(2013) Yuka Kuwano et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes

(2013) T. M. Al tahtamouni et al.   JOURNAL OF APPLIED PHYSICS

Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride

(2013) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Enhancement of light extraction efficiency in sub-300nm nitride thin-film flip-chip light-emitting diodes

(2013) M. Lachab et al.   SOLID-STATE ELECTRONICS

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

(2012) Max Shatalov et al.   Applied Physics Express

Internal quantum efficiency in AlGaN with strong carrier localization

(2012) J. Mickevičius et al.   APPLIED PHYSICS LETTERS

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

(2012) Hideaki Murotani et al.   APPLIED PHYSICS LETTERS

Optical gas sensing: a review

(2012) Jane Hodgkinson et al.   MEASUREMENT SCIENCE and TECHNOLOGY

Novel Solution Growth Method of Bulk AlN Using Al and Li$_{3}$N Solid Sources

(2011) Yoshihiro Kangawa et al.   Applied Physics Express

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

(2011) Kazuhito Ban et al.   Applied Physics Express

High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

(2011) James R. Grandusky et al.   Applied Physics Express

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

(2011) R. Dahal et al.   APPLIED PHYSICS LETTERS

High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition

(2011) Yoshinobu Aoyagi et al.   APPLIED PHYSICS LETTERS

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

(2011) Takuya Nomura et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of dislocation arrays in AlN single crystals grown by PVT

(2011) Rafael Dalmau et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

(2010) Cyril Pernot et al.   Applied Physics Express

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

(2010) Hideki Hirayama et al.   Applied Physics Express

Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes

(2010) Matteo Meneghini et al.   APPLIED PHYSICS LETTERS

Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector

(2010) N. Lobo et al.   APPLIED PHYSICS LETTERS

Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices

(2010) A.A. Allerman et al.   JOURNAL OF CRYSTAL GROWTH

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates

(2010) A.V. Sampath et al.   SOLID-STATE ELECTRONICS

Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

(2010) M.A. Würtele et al.   WATER RESEARCH

Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region

(2009) Vinod Adivarahan et al.   Applied Physics Express

High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer

(2009) Hirotoshi Tsuzuki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states

(2009) J. Mickevičius et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

(2008) R. Jain et al.   APPLIED PHYSICS LETTERS

Large-area AlN substrates for electronic applications: An industrial perspective

(2008) Robert T. Bondokov et al.   JOURNAL OF CRYSTAL GROWTH

Effect of the AIN nucleation layer growth on AlN material quality

(2008) O. Reentilä et al.   JOURNAL OF CRYSTAL GROWTH

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics