Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 9, Pages 1483-1486Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2932140
Keywords
alpha phase-dominated; Ga2O3; MOCVD; UV photodetectors
Categories
Funding
- National Natural Science Foundation of China [61821091, 61574169, 61574166]
- Ministry of Science and Technology of China [2018YFB0406504, 2016YFA0201803, 2017YFB0405603]
- Key Research Program of Frontier Sciences of the Chinese Academy of Sciences [QYZDB-SSW-JSC048, QYZDY-SSW-JSC001]
Ask authors/readers for more resources
alpha -phase-dominated Ga2O3 films were heteroepitaxially grown on c-plane sapphire substrate by metal-organic chemical vapor deposition (MOCVD), followed by the fabrication of ultraviolet (UV) photodetectors (PDs) with a metal-semiconductor-metal (MSM) structure using a Ti/Au metal stack as the electrode in an interdigitated geometry. The PDs possess a record low dark current of 81 fA under a bias voltage of 12 V, with a high sensitivity as confirmed by a record high photo-to-dark-current ratio exceeding 10(7) under 254 nm light illumination. Furthermore, the PDs also exhibit a high responsivity and the photoconductive gain of 11.5 A/W and 55, respectively. Most importantly, it shows an ultrahigh detectivity of 1.0 x 10(15) Jones with a quite fast response of 42 ms, paving the way for advancement of next-generation PD applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available