Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawidebandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.

Automated summary

This review presents recent research on Ultrawidebandgap (UWBG) semiconductors in optoelectronics and microelectronics, and discusses the challenges and opportunities faced by these semiconductors.