Article
Engineering, Electrical & Electronic
Xingqi Ji, Yuzhuo Yuan, Xuemei Yin, Shiqi Yan, Zijian Ding, Jiawei Zhang, Qian Xin, Aimin Song
Summary: Amorphous Ga2O3 (a-Ga2O3) thin-film phototransistors were fabricated by sputtering and exhibited excellent solar-blind detection properties with high responsivity, detectivity, external quantum efficiency, and photo-to-dark current ratio. The performance of these phototransistors is comparable to or even better than that of high-performance crystalline beta-Ga2O3 phototransistors. A 10 x 10 array of a-Ga2O3 phototransistors was fabricated, showing a clear pattern with high contrast. Additionally, light control logic gates based on a-Ga2O3 thin-film phototransistors were successfully realized. Our work highlights the great potential of a-Ga2O3 thin-film phototransistors in large area photosensitive circuits with high detection sensitivity and signal-to-noise ratio.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Maria Isabel Pintor-Monroy, Martin Gregorio Reyes-Banda, Carlos Avila-Avendano, Manuel A. Quevedo-Lopez
Summary: In this study, a simple and cost-effective method for fabricating thin film transistors (TFTs) based on undoped amorphous Ga2O3 thin films deposited at room temperature by magnetron sputtering is discussed. The control of Ga2O3 thin film resistivity over a wide range is demonstrated by controlling the deposition power and pressure. These TFTs exhibit promising characteristics and have been evaluated as phototransistors under DUV radiation, showing high rejection ratio, responsivity, gain, detectivity, and photosensitivity.
IEEE SENSORS JOURNAL
(2021)
Article
Nanoscience & Nanotechnology
Sanghyun Moon, Donggyu Lee, Jehwan Park, Jihyun Kim
Summary: This study demonstrates the fabrication of a high dielectric constant, 2D amorphous gallium oxide (GaOX) using the liquid-gallium squeezing technique. The GaOX is combined with a beta-phase gallium oxide (β-Ga2O3) conducting nanolayer to form a stable MISFET. The incorporation of the 2D GaOX gate dielectric layer in an active channel layer enables the facile fabrication of MISFET devices at room temperature.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Taishi Ikeuchi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
Summary: This paper presents the gate-tunable plasticity in artificial synaptic devices based on four-terminal planar memristors with amorphous gallium oxide. Reproducible resistance switching properties were achieved by applying voltages to the four terminals, indicating two-dimensional modulation of oxygen vacancy distribution. Gate-tunable synaptic plasticity was successfully implemented by assigning read/write and gate roles to two pairs of diagonally arranged electrodes, demonstrating multilevel modulation of conductance change efficiency mimicking neural functions in biological neural networks.
APPLIED PHYSICS EXPRESS
(2023)
Article
Chemistry, Multidisciplinary
Hao-Yu Lan, Yu-Hung Hsieh, Zong-Yi Chiao, Deep Jariwala, Min-Hsiung Shih, Ta-Jen Yen, Ortwin Hess, Yu-Jung Lu
Summary: Monolayer transition metal dichalcogenides have low total absorption of photons, hindering the realization of high-performance optoelectronic functionalities. Gate-tunable plasmonic photoFETs show potential for enhancing photoresponsivity and photocurrent in monolayer MoS2, providing a systematic methodology for designing ultrathin plasmon-enhanced photodetectors for future compact optoelectronic devices.
Article
Engineering, Electrical & Electronic
Bogyeom Seo, Jusung Chung, Naresh Eedugurala, Jason D. Azoulay, Hyun Jae Kim, Tse Nga Ng
Summary: This study demonstrates the integration of an organic bulk heterojunction polymer layer on an oxide thin-film transistor to achieve high-efficiency photodetection in the short-wave infrared region. By using trap-assisted charge injection, the organic semiconductor's photoresponse at longer wavelengths is enhanced. The detector performance is optimized by investigating the balance between bias stress and signal-to-noise under different bias conditions, resulting in a responsivity at 1550 nm up to 130 mA/W at a low light intensity.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Jintao Fu, Hao Jiang, Changbin Nie, Feiying Sun, Linlong Tang, Yunjie Li, Zhancheng Li, Wen Xiong, Jun Yang, Xin Li, Dahua Zhou, Jun Shen, Shuanglong Feng, Haofei Shi, Paul Mulvaney, Xingzhan Wei
Summary: Field-effect phototransistors with gate voltage modulation allow dynamic performance control and significant signal amplification. A polarity-tunable field-effect phototransistor based on a graphene/ultrathin Al2O3/Si structure is demonstrated, capable of changing the transfer characteristic curve from unipolar to ambipolar by modulating light. The introduction of an ultrathin Al2O3 interlayer enables the device to achieve high responsivity, bandwidth, gain-bandwidth product, and specific detectivity, overcoming the gain-bandwidth trade-off in current field-effect phototransistors.
Article
Materials Science, Multidisciplinary
Kyungho Park, Jin Hyeok Lee, Byung Ha Kang, Jusung Chung, Hee Jun Kim, Kyungmoon Kwak, Hyun Jae Kim
Summary: In this study, IGZO-based phototransistors capable of detection and storage in the visible light region were fabricated through PDMS treatment. The PDMS residues enhance the optoelectronic characteristics of the devices, leading to improved photoresponsivity, photosensitivity, and detectivity. Furthermore, the devices demonstrate potential for multilevel photomemory.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
I. Sak Lee, Joohye Jung, Dong Hyun Choi, Sujin Jung, Kyungmoon Kwak, Hyun Jae Kim
Summary: A homojunction-structured oxide phototransistor based on mechano-chemically treated IGZO absorption layer exhibited outstanding optoelectronic characteristics and sensitivity, making it suitable for optical sensor applications.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Ceramics
Iva Milisavljevic, Yiquan Wu
Summary: This study demonstrates the successful fabrication of beta-(AlxGa1-x)(2)O-3 films using a metal-alkoxide-based spin-coating technique. The films show good crystallinity and comparable properties to films made by other deposition methods. The tunable properties of the films make them suitable for electronic, optoelectronic, and photonic device applications.
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY
(2023)
Article
Chemistry, Physical
Xingqi Ji, Xuemei Yin, Yuzhuo Yuan, Shiqi Yan, Xiaoqian Li, Zijian Ding, Xinyu Zhou, Jiawei Zhang, Qian Xin, Aimin Song
Summary: In this study, Schottky photodiodes with sputtered amorphous Ga2O3 were fabricated for the first time and achieved excellent solar-blind detection performances. The high performance can be attributed to the large concentration of oxygen vacancies, the possible photo released carriers from deep-level acceptors, and the high film uniformity.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Ying-qi Zhang, Li-ying Zhou, Sheng-ye Tao, Yu-zhang Jiao, Jin-feng Li, Kai-ming Zheng, Yuan-chao Hu, Kai-xuan Fang, Cheng Song, Xiao-yan Zhong, Limei Xu, Ke-Fu Yao, Zheng-jun Zhang, Na Chen
Summary: This study demonstrates the ability to form various amorphous derivatives, ranging from metals to semiconductors and insulators, by introducing oxygen into an amorphous alloy system. These oxygen-containing derivatives exhibit gradual transparency with opened bandgaps, leading to increased optical transmittance. Additionally, integrating reflective metal-type amorphous alloys with transparent insulator-type amorphous oxides allows for full-color tuning over the entire visible spectral range.
SCIENCE CHINA-MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Samuel H. Amsterdam, Anil U. Mane, Alex B. F. Martinson
Summary: Gallium oxide is an effective material for detecting vacuum-ultraviolet photons. Nanometer thick films of amorphous gallium oxide deposited through atomic layer deposition have high absorptivity in the 120-200 nm vacuum-ultraviolet region. By utilizing the strong absorption of the ultrathin film, self-powered Schottky diode photodetectors using graphene as a VUV-transparent electrode are fabricated, significantly extending the spectral range of gallium oxide-based photodetectors.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Chen Sun, Chao Li, Subhranu Samanta, Kaizhen Han, Zijie Zheng, Jishen Zhang, Qiwen Kong, Haiwen Xu, Zuopu Zhou, Yue Chen, Cheng Zhuo, Kai Ni, Xunzhao Yin, Xiao Gong
Summary: 3D NAND has been scaled beyond conventional 2D NAND by introducing an a-IGZO channel, which overcomes the low mobility, instability caused by grain boundaries, and device-to-device variations in electrical characteristics. Ultrascled FG transistors with a 60 nm channel length achieved the highest ON current among reported a-IGZO-based flash devices, making them suitable for high-density, low-power, and high-performance 3D NAND applications. Additionally, a nonvolatile and area-efficient TCAM using only two parallel-connected a-IGZO FG transistors addressed the scalability issue and achieved significant energy reduction compared to other TCAM technologies.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Li Yuan, Shasha Li, Guoxiang Song, Xian wen Sun, Xinan Zhang
Summary: Gallium oxide thin films prepared using the solution process method were studied as gate dielectric for thin-film transistors, showing excellent dielectric performance. The optimized Ga2O3 thin film demonstrated high bias stress stability and impressive performance metrics for low-voltage operation oxide TFTs.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Zhen Hu, Libo Zhang, Atasi Chakraborty, Gianluca D'Olimpio, Jun Fujii, Anping Ge, Yuanchen Zhou, Changlong Liu, Amit Agarwal, Ivana Vobornik, Daniel Farias, Chia-Nung Kuo, Chin Shan Lue, Antonio Politano, Shao-Wei Wang, Weida Hu, Xiaoshuang Chen, Wei Lu, Lin Wang
Summary: This study reports the observation of the second-order NLHE in type-II Dirac semimetal CoTe2 under time-reversal symmetry. The NLHE is determined by the disorder-induced extrinsic contribution on the broken-inversion-symmetry surface, and terahertz rectification at room temperature is achieved without the need for semiconductor junctions or bias voltage. Remarkable photoresponsivity, response time, and mean noise equivalent power are achieved. This opens a new pathway for low-energy photon harvesting in strongly spin-orbit-coupled and inversion-symmetry-breaking systems.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Jie Qiu, Jie Cao, Xusheng Liu, Pei Chen, Guan Feng, Xumeng Zhang, Ming Wang, Qi Liu
Summary: Researchers have developed a flexible organic electrochemical transistor-based synaptic device that can directly respond to biological neurotransmitters, exhibiting both short-term and long-term synaptic behaviors. The device shows reliable synaptic response and excellent mechanical flexibility under both flat and bending conditions, providing a promising approach for direct integration with soft biological tissues.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Boyan Wang, Ming Xiao, Joseph Spencer, Yuan Qin, Kohei Sasaki, Marko J. Tadjer, Yuhao Zhang
Summary: This work presents vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel junction termination extension (JTE) made of multiple layers of sputtered p-type nickel oxide (NiO). The JTE, which eliminates the need for etching or implantation, shows good throughput. The fabricated Ga2O3 SBDs exhibit excellent performance, with a forward voltage below 1.9 V, a differential specific on-resistance of 5.9 m(2)·cm(2), and a breakdown voltage over 2.5 kV. The results also demonstrate the promise of Ga2O3 SBDs for kilovolt power electronics.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Boyan Wang, Ming Xiao, Zichen Zhang, Yifan Wang, Yuan Qin, Qihao Song, Guo-Quan Lu, Khai Ngo, Yuhao Zhang
Summary: Size optimization of Achip is crucial for accurate cost analysis and design of multichip modules, especially for high-cost WBG and UWBG power devices. This study presents a new electrothermal approach to optimize Achip for a given set of specifications, considering breakdown voltage, conduction current, and switching frequency. The approach takes into account conduction and switching losses, as well as heat dissipation in the chip and package. It provides guidelines for power module design and offers more accurate cost analysis.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Multidisciplinary
Kaixuan Zhang, Zhen Hu, Libo Zhang, Yulu Chen, Dong Wang, Mengjie Jiang, Gianluca D'Olimpio, Li Han, Chenyu Yao, Zhiqingzi Chen, Huaizhong Xing, Chia-Nung Kuo, Chin Shan Lue, Ivana Vobornik, Shao-Wei Wang, Antonio Politano, Weida Hu, Lin Wang, Xiaoshuang Chen, Wei Lu
Summary: This study exploits low-energy type-II Dirac fermions in topological semimetals for ultrasensitive THz detection, and demonstrates a novel photodetector combining two Dirac materials, graphene and NiTeSe, with high responsivity, fast response time, and outstanding stability.
Article
Physics, Applied
Ming Xiao, Boyan Wang, Joseph Spencer, Yuan Qin, Matthew Porter, Yunwei Ma, Yifan Wang, Kohei Sasaki, Marko Tadjer, Yuhao Zhang
Summary: This work presents a heterogeneous junction termination extension (JTE) based on p-type nickel oxide (NiO) for gallium oxide (Ga2O3) devices. The NiO JTE is deposited on the surface of Ga2O3 by magnetron sputtering, and consists of multiple layers with varying lengths to achieve a graded decrease in effective charge density. Experimental results show that the JTE enables a breakdown voltage over 3.2 kV and a consistent parallel-plate junction field of 4.2 MV/cm, with a power figure of merit of 2.5-2.7 GW/cm(2).
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Guangjian Wu, Zefeng Zhang, Kun Ba, Xumeng Zhang, Jinhua Zeng, Chongyang Bai, Qi Liu, Jianlu Wang
Summary: The researchers report a hybrid MoS2/PbS quantum dots-based optoelectronic device with short-term memory properties for in-sensor reservoir computing (RC). They demonstrate that the device can effectively regulate the dynamic temporal photoresponse behavior through the photogating effect induced by incident optical intensity and time. The device shows high accuracy in image classifying and time series prediction, indicating its potential for intelligent edge computing.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Chengyu Lu, Juanjuan Zhou, Chenyu Tang, Qinyong Dai, Yingquan Peng, Wenli Lv, Lei Sun, Sunan Xu, Weida Hu
Summary: In this work, mixed-halide CH3NH3PbCl (x) Br3-x single crystal-based photodetectors with varying Cl/Br ratios were fabricated. Vertical and parallel structures devices exhibited ultranarrow spectral responses under bottom illumination, with a full-width at half-maximum less than 16 nm. The observed performance can be attributed to the unique carrier generation and extraction mechanisms within the single crystal under short and long wavelength of illumination. These findings provide valuable insights into the development of narrow-band photodetectors that do not necessitate the use of filters and have tremendous potential for diverse applications.
Review
Multidisciplinary Sciences
Fang Wang, Tao Zhang, Runzhang Xie, Zhen Wang, Weida Hu
Summary: This article proposes practical guidelines for characterizing the performance of 2D photodetectors and analyzes common situations where their performance can be misestimated.
NATURE COMMUNICATIONS
(2023)
Article
Optics
Xiao Fu, Tangxin Li, Bin Cai, Jinshui Miao, Gennady N. Panin, Xinyu Ma, Jinjin Wang, Xiaoyong Jiang, Qing Li, Yi Dong, Chunhui Hao, Juyi Sun, Hangyu Xu, Qixiao Zhao, Mengjia Xia, Bo Song, Fansheng Chen, Xiaoshuang Chen, Wei Lu, Weida Hu
Summary: Conventional AI machine vision technology uses separate units for sensing, computing, and storage, leading to high power consumption and latency due to frequent data movement. A more efficient approach is using sensor elements to offload memory and computational tasks. We propose a non-volatile photomemristor that can modulate reconfigurable responsivity and store it in the device. This photomemristor implements computationally complete logic with photoresponse-stateful operations, serving as both a logic gate and memory.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Computer Science, Information Systems
Weishuang Liang, Qi Liu, Yebing Gan
Summary: This paper proposes a fractional frequency division phase-locked loop based on phase interpolation and implements it using the TSMC 0.11μm CMOS process. A digital time converter (DTC) module is added to reduce the fractional spurious by phase interpolation. The DTC module is calibration-free, and the error introduced by it is only related to the DAC adopted in the DTC. The proposed FNPLL achieves low power consumption, high accuracy, and low phase noise in both fractional and integer division modes.
Article
Engineering, Electrical & Electronic
Yuan Qin, Ming Xiao, Ruizhe Zhang, Qingyun Xie, Tomas Palacios, Boyan Wang, Yunwei Ma, Ivan Kravchenko, Dayrl P. Briggs, Dale K. Hensley, Bernadeta R. Srijanto, Yuhao Zhang
Summary: This work presents the fabrication of quasi-vertical GaN Schottky barrier diodes (SBDs) on a 6-inch Si substrate with a record-breaking breakdown voltage (BV) of over 1 kV. The novel use of a deep mesa in quasi-vertical devices allows for a self-aligned edge termination, and the mesa sidewall is covered by p-type nickel oxide (NiO) to reduce the surface field. The device exhibits a parallel-plane junction electric field of 2.8 MV/cm, along with low turn-on voltage and specific on-resistance. Additionally, it demonstrates excellent overvoltage robustness under continuous stress.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Yi Dong, Chaoyu Zhao, Hailu Wang, Yu Jiang, Yueyue Fang, Jinjin Wang, Shikun Duan, Xiao Fu, Jinshui Miao, Weida Hu
Summary: This article summarizes the significant progress in 2D/bulk semiconductor research and outlines the future roadmap of infrared photodetection technology based on such mixed-dimensional heterostructures. The paper highlights some concepts to enhance the performance of infrared photodetectors and proposes strategies for large-scale integration and functional innovations.
Review
Optics
Piotr Martyniuk, Peng Wang, Antoni Rogalski, Yue Gu, Ruiqi Jiang, Fang Wang, Weida Hu
Summary: This article discusses the importance and recent developments of avalanche photodiodes (APDs) in optical communication systems, as well as potential alternatives to traditional APD technologies. It shows that the evolution of APDs has led to improvements in device performance, such as higher bandwidths, lower noise, and higher gain-bandwidth products. The use of two-dimensional materials-based APDs is considered as a promising alternative due to their high-performance sensitivity and low excess noise.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Optics
Yonghao Bu, Xiansong Ren, Jing Zhou, Zhenhan Zhang, Jie Deng, Hangyu Xu, Runzhang Xie, Tianxin Li, Weida Hu, Xia Guo, Wei Lu, Xiaoshuang Chen
Summary: We have achieved a breakthrough in developing monolithic polarization detectors by creating a configurable circular-polarization-dependent optoelectronic silent state using the superposition of two photoresponses with enantiomerically opposite ellipticity dependences. This scheme significantly enhances the circular polarization extinction ratio and sensitivity to light ellipticity perturbation.
LIGHT-SCIENCE & APPLICATIONS
(2023)
