345-MW/cm2 2608-V NO2 p-Type Doped Diamond MOSFETs With an Al2O3 Passivation Overlayer on Heteroepitaxial Diamond

Diamond metal oxide semiconductor field effect transistors(MOSFETs) on high-quality heteroepitaxial diamond (Kenzan diamond (R)) with NO2 p-type doping and an Al2O3 passivation overlayer exhibited a high off-state breakdown voltage of -2608 V. The 100-nm-thick Al2O3 passivation overlayer on the hole channel increased the high-voltage-handling capability of the MOSFETs by substantially suppressing the off-state drain leakage currents. The MOSFET showed a specific on-resistance of 19.74 m Omega center dot cm(2) and a maximum drain current density of -288 mA/mm, with an extremely low gate leakage current <10(-6) mA/mm. The Baliga's Figure-Of-Merits was experimentally determined to be 344.6 MW/cm(2), and the maximum DC power densitywas observed to be 21.0W/mm.

Automated summary

The study developed diamond MOSFET transistors with high off-state breakdown voltage on high-quality heteroepitaxial diamond, and the Al2O3 passivation overlayer increased their high-voltage-handling capability. Results showed specific on-resistance and maximum drain current density for the MOSFET, with extremely low gate leakage current.