226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

(2018) Dong Liu et al.   APPLIED PHYSICS LETTERS

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band

(2017) S. M. Sadaf et al.   NANO LETTERS

Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

(2017) Jae-Seong Park et al.   ECS Journal of Solid State Science and Technology

Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

(2016) S. Zhao et al.   APPLIED PHYSICS LETTERS

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

(2016) Jong Won Lee et al.   Scientific Reports

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

(2015) A. T. M. Golam Sarwar et al.   APPLIED PHYSICS LETTERS

Interband tunneling for hole injection in III-nitride ultraviolet emitters

(2015) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

(2014) Jai Verma et al.   APPLIED PHYSICS LETTERS

Polarization Induced High Al Composition AlGaN p–n Junction Grown on Silicon Substrates

(2014) Peng Zhang et al.   CHINESE PHYSICS LETTERS

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

(2014) Hideki Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes

(2013) Han-Youl Ryu et al.   Applied Physics Express

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

(2013) Jai Verma et al.   APPLIED PHYSICS LETTERS

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

(2013) Yuka Kuwano et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

On the origin of the 265 nm absorption band in AlN bulk crystals

(2012) Ramón Collazo et al.   APPLIED PHYSICS LETTERS

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

(2012) J. E. Northrup et al.   APPLIED PHYSICS LETTERS

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

(2011) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

(2011) R. Dalmau et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

(2011) Cyril Pernot et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

(2010) Hideki Hirayama et al.   Applied Physics Express

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

(2008) Hideki Hirayama et al.   Applied Physics Express

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics