Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

(2018) Zi-Hui Zhang et al.   Nanoscale Research Letters

Improved performance of AlGaN-based deep ultraviolet light-emitting diode using modulated-taper design for p-AlGaN layer

(2018) L Lu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

AlGaN photonics: recent advances in materials and ultraviolet devices

(2018) Dabing Li et al.   Advances in Optics and Photonics

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

(2018) Zi-Hui Zhang et al.   Nanoscale Research Letters

Progress in efficient doping of high aluminum-containing group III-nitrides

(2018) Y.-H. Liang et al.   Applied Physics Reviews

Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects

(2018) Kyeong Heon Kim et al.   MATERIALS & DESIGN

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

(2018) Yosuke Nagasawa et al.   Applied Sciences-Basel

On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes

(2017) Zi-Hui Zhang et al.   OPTICS EXPRESS

UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections

(2017) Zi-Hui Zhang et al.   OPTICS LETTERS

Hole Transport Manipulation To Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes

(2017) Zi-Hui Zhang et al.   ACS Photonics

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

(2016) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

A charge inverter for III-nitride light-emitting diodes

(2016) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters

(2015) Yuh-Shiuan Liu et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

(2014) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

(2014) Jai Verma et al.   APPLIED PHYSICS LETTERS

AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport

(2014) Md. Mahbub Satter et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

(2014) Hideki Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

(2014) Zi-Hui Zhang et al.   OPTICS EXPRESS

Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes

(2013) Han-Youl Ryu et al.   Applied Physics Express

Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

(2012) Shibin Li et al.   APPLIED PHYSICS LETTERS

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

(2010) L. Zhang et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics