Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 4, Pages 485-488Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2664079
Keywords
AlGaN; avalanche photodiodes; separate absorption and multiplication; heterostructure
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Funding
- National Key R&D Program of China [2016YFB0400903]
- NSFC [61634002, 61640407, 61474060]
- key R&D project of Jiangsu Province, China [BE2016174]
- Anhui University Natural Science Research Project, China [KJ2015A153]
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A heterostructure multiplication region consisting of high/low-Al-content AlGaN layers instead of the conventional high-Al-content AlGaN homogeneous layer was proposed to increase the average hole ionization coefficient and to realize a higher gain in AlGaN avalanche photodiodes (APDs) based on separate absorption and multiplication structures. The fabricated APDs with the Al0.2Ga0.8N/Al0.45Ga0.55N heterostructure multiplication region exhibit very steep breakdowns and a maximum gain of 5.5 x 10(4) at a reverse bias of 109 V. Meanwhile, the large potential barrier to the conduction band formed at the Al0.2Ga0.8N/Al0.45Ga0.55N heterostructure interface can suppress the electron-initiated multiplication, and hence, reduce the noise of the APDs by impeding the transport of electrons. The simulation of noise confirms this effect from the heterostructure.
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