Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

Published 2010 View Full Article

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Title
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
Authors
Keywords
-
Journal
SCIENCE
Volume 327, Issue 5961, Pages 60-64
Publisher
American Association for the Advancement of Science (AAAS)
Online
2010-01-01
DOI
10.1126/science.1183226

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