Article
Multidisciplinary Sciences
Raphael Jannin, Yuri van der Werf, Kees Steinebach, Hendrick L. Bethlem, Kjeld S. E. Eikema
Summary: The Pauli exclusion principle has a significant impact on the structure of matter and particle interaction. Recent experiments have confirmed the existence of Pauli blockade in an optically trapped Fermi gas of He-3.
NATURE COMMUNICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Johannes Boy, Ruediger Mitdank, Zbigniew Galazka, Saskia F. Fischer
Summary: This study provides the first experimental determination of the low-temperature thermal properties of novel highly pure single-crystalline ZnGa2O4. It was found that the thermal conductivity increases with decreasing temperatures due to reduced phonon-phonon Umklapp scattering down to 50 K, while at lower temperatures, the thermal conductivity is limited by boundary scattering.
MATERIALS RESEARCH EXPRESS
(2022)
Article
Physics, Applied
Hamidreza Esmaielpour, Brandon K. Durant, Kyle R. Dorman, Vincent R. Whiteside, Jivtesh Garg, Tetsuya D. Mishima, Michael B. Santos, Ian R. Sellers, Jean-Francois Guillemoles, Daniel Suchet
Summary: Increasing the thickness of the AlAsSb barrier material reduces the relaxation of hot carriers, leading to improved power conversion efficiency of photovoltaic solar cells.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Shuang Wu, Qian Liu, Zhonggang Wang, Zhenhua Zhang, Zhihong Lu, Rui Xiong, Jinlei Yao, Dengjing Wang
Summary: In this paper, H+ is used to bombard N-type undoped GaAs substrates to impart semiconductor-like electrical properties. The shape and structure of the sample were measured using atomic force microscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy, while the electrical properties were tested using the Physical Property Measurement System. The treated GaAs substrate surface showed hole-type conductivity at 84 K and electron-type conductivity at room temperature. This method not only preserves the lattice structure but also transforms the surface properties of GaAs, providing a new idea for the future development of GaAs-based heterojunction devices.
Article
Physics, Applied
Liqiang Tian, Guangcheng Sun, Dong Jing, Cong Pan, Zeen Ran, Wei Shi, Chao Zhang
Summary: Theoretical calculations on undoped semi-insulating GaAs at temperatures ranging from 5 to 500 K revealed that the peak value of electron mobility reached 11.4 x 10(5) cm(2) V-1 s(-1) at 27 K, while the peak value of dark resistivity was approximately 1.29 x 10(12) ohm cm at 154 K. Various scattering processes and material properties have a significant impact on the performance of semiconductor materials.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Meng-meng Gao, Liu-yan Fan, Xiao-ye Gong, Jing-lin You, Zhi-zhan Chen
Summary: The photoexcited carrier dynamics of high-purity (HPSI) and vanadium-doped semi-insulating (VDSI) 4H-SiC irradiated by lasers with different wavelengths and powers were investigated. It was found that the longitudinal optical (LO) peaks of HPSI and VDSI did not shift with laser power variations when a 532-nm laser was used, due to a low concentration of photoexcited carriers. However, when a 355-nm laser was adapted, the relationship between the photoexcited carrier concentrations and the laser power was found to be nonlinear because of the dominance of trap-assisted Auger (TAA) recombination.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Donglin Guo, Zhengmeng Xu, Chunhong Li, Kejian Li, Bin Shao, Xianfu Luo, Jianchun Sun, Yilong Ma
Summary: Using full electron-phonon interactions and the Boltzmann transport equation, this study investigates the phonon scattering channel and electrical properties of graphene under anharmonic phonon renormalization (APRN). The results show that the APRN reduces the phonon frequency and three-phonon phase space with increasing temperature, affecting the acoustic branch more than the optical branch. The thermal conductivity of graphene decreases after considering three- and four-phonon scattering, and the primary scattering channels are identified. Furthermore, the APRN increases the strength of electron-phonon coupling and leads to an increase in n-type electric resistance at room temperature.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
V. N. Stavrou
Summary: The study focuses on a semiconductor heterostructure made with two asymmetric coupled self-assembled quantum dots (ACSAQDs) for the potential of serving as a spin based quantum dot qubit. A sophisticated theoretical model and Fermi's golden rule were used to evaluate carrier properties within the quantum dots, with the volume of the quantum dots identified as a crucial parameter for controlling the spin-flip relaxation mechanism. Other factors such as spacing between quantum dots, lattice temperature, and external magnetic field presence also have considerable effects on the spin-flip relaxation time.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2021)
Article
Materials Science, Multidisciplinary
Hermann A. Durr, Ralph Ernstorfer, Bradley J. Siwick
Summary: Despite the importance of electron-phonon and phonon-phonon coupling in determining material properties, detailed momentum-dependent information has been elusive. UEDS is a powerful technique for studying these interactions, as demonstrated through experiments on Ni, WSe2, and TiSe2 materials. By combining ab initio calculations with UEDS, insights into electronic and magnetic dynamics impacting the scattering can be obtained.
Article
Nanoscience & Nanotechnology
Michael Moskalets
Summary: This paper discusses emission from orbitally degenerate quantum levels, showing that degeneracy provides additional flexibility and the small Aharonov-Bohm flux is a powerful tool.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2021)
Article
Physics, Mathematical
J. Amarel, D. Belitz, T. R. Kirkpatrick
Summary: This study presents a rigorous solution of the Boltzmann equation for electron-phonon scattering in three spatial dimensions at low temperatures, with different temperature scaling of scattering rates providing a control parameter and allowing for a rigorous proof of Bloch's T-5 law. The relationship between the Boltzmann equation and the Kubo formula is also discussed, along with implications for electron scattering by excitations other than phonons.
JOURNAL OF MATHEMATICAL PHYSICS
(2021)
Review
Quantum Science & Technology
Yuan-Fei Gao, Jia-Min Lai, Jun Zhang
Summary: Long-lived phonons within crystalline bulk acoustic wave (BAW) resonators have shown potential as carriers of information for scientific and technological applications. By utilizing phase-matched Brillouin interactions, efficient optical access to GHz frequency mechanical modes within macroscopic crystalline solids can be achieved. The review also discusses the future research direction for bulk optomechanical systems and exciton-phonon coupling systems.
ADVANCED QUANTUM TECHNOLOGIES
(2022)
Article
Physics, Applied
Li Zhang, Qi Wang, Guang-Hui Wang
Summary: This paper investigates the dispersive spectra of polar optical phonon modes in III-nitride based nanostructures with different dielectric media using the macroscopic dielectric continuum model. The effects of dielectric and quantum size on the dispersive frequencies of phonon modes are emphasized. The study reveals that the dielectric constant of the inner/outer medium significantly influences the dispersive spectra of the surface optical (SO) phonon mode in GaN quantum rings (QRs), and the crystallographic structures of GaN also have different effects on the degenerating behavior and electron-phonon coupling strength. The findings provide a beneficial opportunity for independently adjusting the dispersive spectra of the two branches of SO modes in GaN nanostructures for the design and development of phonon-based detectors and sensors.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Multidisciplinary
Aleksandar Demic, Zoran Ikonic, Paul Dean, Dragan Indjin
Summary: This work discusses terahertz quantum cascade laser designs that utilize resonant phonon mechanism for assisting the lasing process. The study investigates whether higher energy separation would be more beneficial for high temperature performance compared to the commonly used resonant value. A density matrix model is employed for reliable cut-off temperature estimation, and design improvements are presented to enhance material gain and achieve 10-50 K higher cut-off temperature.
NEW JOURNAL OF PHYSICS
(2022)
Article
Physics, Condensed Matter
Nguyen Dinh Hien
Summary: This article examines the effects of different confined phonon models on the intersubband absorption linewidth in semi parabolic quantum well (SPQW) by considering the optically detected magneto confined phonon resonance (ODMCPR) effect. The study utilizes projection operator and profile methods to calculate the linear conductivity tensor, magneto-phonon resonance absorption power (MPRAP), and measure the absorption linewidth or full width at half maximum (FWHM) at the ODMCPR peak. The findings show that the FWHM is influenced by temperature, Landau level, and confining potential frequency, and there is variation in the FWHM depending on the slab and guided phonon modes as well as the Huang-Zhu (HZ) phonon mode model. The confined phonon modes greatly impact the intersubband absorption linewidth in the semiparabolic quantum well, and the calculations align well with previous experimental studies.
PHYSICA B-CONDENSED MATTER
(2022)
Article
Chemistry, Multidisciplinary
Yu-Hsuan Hsu, Wan-Yu Wu, Kun-Lin Lin, Yu-Hsuan Chen, Yi-Hsin Lin, Po-Liang Liu, Ching-Lien Hsiao, Ray-Hua Horng
Summary: In this study, epsilon-Ga2O3 epilayers are grown on c-plane sapphire by metal-organic chemical vapor deposition, and the structural relationship between epsilon-Ga2O3 and kappa-Ga2O3 is elucidated through detailed transmission electron microscopy characterization.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Engineering, Electrical & Electronic
Abhijeet Barua, Ryan J. White, Kevin D. Leedy, Vidya Chidambaran, Rashmi Jha
Summary: Limited work has been done on the behavior of Schottky barrier field-effect transistors for neurotransmitter sensing applications. In this study, low-power deep subthreshold characteristics of thin film transistors made of InGaZnO4 were investigated for the sensitive and selective ex vivo detection of Dopamine. The devices showed promising detection metrics, including a low limit of detection, high binding affinity, and high sensitivity. Furthermore, the devices remained functional even after a regeneration test period, showcasing their potential for long-term use as biosensors.
IEEE SENSORS JOURNAL
(2022)
Article
Physics, Applied
Daram N. Ramdin, Micah S. Haseman, Hsien-Lien Huang, Kevin D. Leedy, Jinwoo Hwang, Leonard J. Brillson
Summary: Iridium is a common impurity in the edge-defined film-fed growth method for producing high-power Ga2O3 device structures, but its effects on carrier transport and recombination have not been fully explored. After nitrogen rapid thermal annealing, the optical and electronic nature of iridium in Ga2O3 and at Ir/Ga2O3 interfaces change on a near-nanometer to micrometer scale, influencing defect-assisted tunneling, diode rectification, and electric field strength preservation. Various measurement techniques reveal the diffusion and impact of iridium in crystal growth, providing insights for improving device performance.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Optics
Su-Hui Lin, Ming-Chun Tseng, Ray-Hua Horng, Shouqiang Lai, Kang-Wei Peng, Meng-Chun Shen, Dong-Sing Wuu, Shui-Yang Lien, Hao-Chung Kuo, Zhong Chen, Tingzhu Wu
Summary: This study utilized thin p-GaN, ITO, and RPL to improve the performance of DUV-LEDs, resulting in increased WPE and LEE. DUV-LEDs with RPL exhibited lower junction temperature compared to Ref-LED under high injection currents.
Article
Materials Science, Multidisciplinary
Samiran Bairagi, Ching-Lien Hsiao, Roger Magnusson, Jens Birch, Jinn P. Chu, Fu-Gow Tarntair, Ray-Hua Horng, Kenneth Jarrendahl
Summary: In this study, electronic grade ZnGa2O4 epitaxial thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition and their optical properties were investigated using spectroscopic ellipsometry. It was observed that ion etching had no significant impact on the optical properties of the films. Line shape analysis revealed that ZnGa2O4 exhibited both direct and indirect interband transitions, and the optical bandgaps were determined using the modified Cody formalism in good agreement with other bandgap extrapolation procedures.
OPTICAL MATERIALS EXPRESS
(2022)
Review
Nanoscience & Nanotechnology
Tzu-Yi Lee, Li -Yin Chen, Yu-Yun Lo, Sujith Sudheendran Swayamprabha, Amit Kumar, Yu-Ming Huang, Shih-Chen Chen, Hsiao-Wen Zan, Fang -Chung Chen, Ray-Hua Horng, Hao-Chung Kuo
Summary: Micro-light-emitting diodes (mu LEDs) are gaining significant attention in the display industry due to their exceptional optical and electrical characteristics. However, the high production cost and low external quantum efficiency (EQE) are major obstacles for their commercial usage. This article discusses the breakthroughs in mu LED technology, fabrication methods, optical/electrical characteristics, and challenges for display applications, offering potential solutions to address these challenges.
Article
Optics
Yu-Ming Huang, Chun-Yen Peng, Wen-Chien Miao, Hsin Chiang, Tzu-Yi Lee, Yun-Han Chang, Konthoujam James Singh, Z. Daisuke Iida, Ray-Hua Horng, Chi-Wai Chow, Chien-Chung Lin, Kazuhiro Ohkawa, Shih-Chen Chen, Hao-Chung Kuo
Summary: In this study, a high-efficiency InGaN red micro-LED is presented, which incorporates superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector. It exhibits a maximum external quantum efficiency of 5.02% and a low efficiency droop at an injection current density of 112 A/cm(2). The fast carrier dynamics in the InGaN is characterized, and a high modulation bandwidth of 271 MHz is achieved by a 6x 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm(2). The technology holds great promise for full-color micro-displays and high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.
PHOTONICS RESEARCH
(2022)
Article
Engineering, Electrical & Electronic
Qi-Zhen Chen, Chun-Yan Shi, Ming-Jie Zhao, Peng Gao, Wan-Yu Wu, Dong-Sing Wuu, Ray-Hua Horng, Shui-Yang Lien, Wen-Zhang Zhu
Summary: This study investigates the transparent indium-gallium-zinc oxide thin film transistor (IGZO-TFT) prepared by all plasma enhanced atomic layer deposition (PEALD). The properties of the IGZO film and IGZO-TFT based on different In2O3 cycle ratios are examined due to the considerable impact of chemical composition on the performance of IGZO TFTs. The IGZO film prepared by PEALD exhibits amorphous state with excellent conformity and uniformity. By applying a-IGZO films with different In2O3 cycle ratios, a satisfactory electrical performance of the transistor is achieved, with a threshold voltage (V-th) of 1.7 V, a saturation mobility (mu(sat)) of 8.8 cm(2)/Vs, a subthreshold swing (SS) of 0.2 V/decade, and an I-ON/I-OFF of 2.2 x 10(8). This work provides a new approach for achieving transparent TFTs that are more suitable for practical commercial applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Physical
Pojung Lin, Jiazhe Liu, Hongche Lin, Zhiyuan Chuang, Wenching Hsu, Yiche Chen, Poliang Liu, Rayhua Horng
Summary: In this study, GaN-based epitaxial structures were grown on high-resistivity silicon (HRSi) substrates by met-alorganic chemical vapor deposition. The p-type parasitic channels generated at the interfaces of the aluminum nitride (AlN) nucleation layers and HRSi substrates were characterized. A 2-nm thick silicon nitride (SiNx) layer was used to suppress the Al diffusion and prevent the generation of p-type parasitic channels. The insertion loss of the optimized structure was only 0.04 dB/mm higher than that of the annealed HRSi substrate at 10 GHz.
SURFACES AND INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Ray-Hua Horng, Dong-Sing Wuu, Po-Liang Liu, Apoorva Sood, Fu-Gow Tarntair, Yu-Hsuan Chen, Singh Jitendra Pratap, Ching -Lien Hsiao
Summary: In this study, monoclinic gallium oxide (beta-Ga2O3) epilayer was successfully grown on a sapphire substrate by MOCVD. Controlling the growth temperature, TEGa flow rate, and growth time improved the crystallization characteristics of the epilayers. However, it also increased the surface roughness of beta-Ga2O3 film. The growth mechanism and chemical reactions between TEGa and oxygen precursors were analyzed.
MATERIALS TODAY ADVANCES
(2022)
Article
Computer Science, Information Systems
Ray-Hua Horng, Hsiao-Yun Yeh, Niall Tumilty
Summary: This study investigates the impact of thermal effects on the performance of Cu electroplated GaN-based HEMTs. The results show that GaN HEMTs with electroplated Cu demonstrate a significantly enhanced on/off current ratio compared to those without, and thinner HEMT devices with electroplated Cu samples exhibit lower channel temperature.
Article
Engineering, Electrical & Electronic
Anoop Kumar Singh, Chao-Chun Yen, Chun-Fan Wen, Ray-Hua Horng, Dong-Sing Wuu
Summary: Researchers have developed a NO gas sensor with high sensing response for measuring NO gas levels. The sensor is made of ZnO:ZnGa2O4 dual-phase films and exhibits high selectivity and quick response time.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Ray-Hua Horng, Apoorva Sood, Siddharth Rana, Niall Tumity, Fu-Gow Tarntair, Catherine Langpoklakpam, Hao-Chung Kuo, Jitendra Pratap Singh
Summary: Conductive β-Ga2O3 epilayers grown on the sapphire substrate using MOCVD were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si-implanted β-Ga2O3 epitaxial layer. The electrical and carrier transport properties of different MISD with different distance between cathode and anode contact were investigated.
MATERIALS TODAY ADVANCES
(2023)
Article
Materials Science, Multidisciplinary
Siddharth Rana, Shang-Jui Chiu, Chih-Yang Huang, Fu-Gow Tairtan, Yan-Gu Lin, Dong-Sing Wuu, Jitendra Pratap Singh, Guang-Cheng Su, Po-Liang Liu, Ray-Hua Horng
Summary: In this study, a highly sensitive direct irradiating X-ray photodetector (DXPD) based on Zinc Gallium Oxide (ZnGa2O4) epilayers with a metal-semiconductor-metal structure was fabricated. The ZnGa2O4 epilayers were grown on a c-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD). The sensitivity and performance of the DXPD were tested using synchrotron hard X-ray source, and the results showed that ZnGa2O4-based DXPD had significantly higher sensitivity and potential for use in high-performance hard XPDs.
MATERIALS TODAY ADVANCES
(2023)
Article
Engineering, Electrical & Electronic
Wei-Han Chen, Chun-Hao Ma, Shang-Hsien Hsieh, Yu-Hong Lai, Yen-Chien Kuo, Chia-Hao Chen, Sheng-Po Chang, Shoou-Jinn Chang, Ray-Hua Horng, Ying-Hao Chu
Summary: Transparent flexible deep-UV detectors based on high-quality epitaxial films on a flexible substrate have been developed in this study. The detectors show superior performance in terms of electrical current, response time, thermal stability, and mechanical flexibility.
ACS APPLIED ELECTRONIC MATERIALS
(2022)