Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 31, Issue 15, Pages 1237-1240Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2019.2923147
Keywords
Aluminium gallium nitride (AlGaN); epitaxial growth; p-i-n photodiodes; metal organic chemical vapor deposition (MOCVD); solar-blind; ultra-violet detectors
Funding
- Space Technology Cells (STC)
- Department of Science and Technology (DST) through the Water Technology Initiative (WTI)
- MHRD through NIEIN
- MeitY
- DST through NNetRA
- DeitY through the Visvesvaraya Ph.D. Scheme
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We report on record high zero-bias external quantum efficiency (EQE) of 92% for back-illuminated Al0.40Ga0.60N p-i-n ultra-violet (UV) photodetectors on sapphire. The zero-bias responsivity measured 211 mA/W at 289 nm, which is the highest value reported for solar-blind, p-i-n detectors realized over any epitaxial wide band-gap semiconductor. This is also the first report for a p-i-n detector, where a polarization-graded Mg-doped AlGaN layer is utilized as the p-contact layer. The devices exhibited a ten-orders of magnitude rectification, a low reverse leakage current density of 1 nA/cm(2) at 10 V, a high R(0)A product of 1.3 x 1011 Omega.cm(2) and supported fields exceeding 5 MV/cm. The light-to-dark current ratio and the UV-to-visible rejection ratio for the detectors exceeded six-orders of magnitude and the thermal noise limited detectivity (D*) measured 6.1 x 1014 cmHz(1/2)W(-1). The state-of-the-art performance parameters can be attributed to a high crystalline quality absorbing AlGaN epi-layer resulting from the use of an AlN/AlGaN superlattice buffer and an improved p-contact via polarization grading.
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