Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

Published 2009 View Full Article

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Title
Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 6, Pages 587-589
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-04-29
DOI
10.1109/led.2009.2018288

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