Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 1, Pages 67-70Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2779867
Keywords
Gate-recess; enhancement-mode; high-voltage; normally-off; beta Ga2O3
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We report enhancement-mode beta-Ga2O3 (BGO) MOSFETs on a Si-doped homoepitaxial channel grown by molecular beam epitaxy. A gate recess process is used to partially remove the epitaxial channel under the 1-mu m gated region to fully deplete at V-GS = 0 V. BGO MOSFETs achieve drain current density near 40 mA/mm and I-ON/I-OFF ratio similar to 10(9) which is the highest reported for homoepitaxial normally-off BGO transistors. At V-GS = 0 V, a breakdown voltage of 198 and 505 V is achieved with the source-drain spacing of 3 and 8 mu m, respectively. The power switching figure of merits for dc conduction and dynamic switch losses meet or exceed the theoretical silicon limit and previously reported depletion-mode BGO transistors.
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