Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

(2015) Wei Zhang et al.   APPLIED PHYSICS LETTERS

Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

(2015) Moritz Brendel et al.   JOURNAL OF APPLIED PHYSICS

Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors

(2015) Fei-Peng Yu et al.   Optical Materials Express

AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

(2013) E. Cicek et al.   APPLIED PHYSICS LETTERS

Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps

(2013) D J Wallis et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

(2011) H. Srour et al.   APPLIED PHYSICS LETTERS

Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface

(2011) Xiaojuan Sun et al.   APPLIED PHYSICS LETTERS

High-temperature ultraviolet detection based on InGaN Schottky photodiodes

(2011) Liwen Sang et al.   APPLIED PHYSICS LETTERS

Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

(2011) Dabing Li et al.   APPLIED PHYSICS LETTERS

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

(2011) F. Xie et al.   ELECTRONICS LETTERS

Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies

(2011) Peta Koteswara Rao et al.   JOURNAL OF APPLIED PHYSICS

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

(2011) Yuanjie Lv et al.   JOURNAL OF APPLIED PHYSICS

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

(2011) Feng Xie et al.   SOLID-STATE ELECTRONICS

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

(2010) W. Chikhaoui et al.   APPLIED PHYSICS LETTERS

Light intensity dependence of photocurrent gain in single-crystal diamond detectors

(2010) Meiyong Liao et al.   PHYSICAL REVIEW B

Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

(2009) Engin Arslan et al.   APPLIED PHYSICS LETTERS

Fabrication study of AlN solar-blind (

(2009) Meei-Ru Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE