Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

Published 2018 View Full Article

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Title
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 6, Pages 869-872
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-04-26
DOI
10.1109/led.2018.2830184

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