4.6 Article

High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 12, Pages 1794-1797

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3032290

Keywords

Solar-blindp hotodetector; Ga2O3 Schottky barrier photodiode; carriermultiplication; record detectivity; ultrahigh gain

Funding

  1. National Key Research and Development Program of China [2018YFB0406504]

Ask authors/readers for more resources

In this letter, we demonstrate a high performance lateral beta-Ga2O3 solar-blind Schottky barrier photodiode (SBPD) with record detectivity (D*) and ultrahigh gain via carrier multiplication process. Due to the strong electric field, the carriers generated under the 254 nm light illumination undergo acceleration and impact ionization, contributing to the internal carrier multiplication process. Therefore, the photodetector (PD) is equipped with record D* of 2x10(16) Jones and ultrahigh gain of 1.7 x 10(4), combining with a high photo-to-dark-current ratio ofmore than 10(5), a responsivity of 1.2x10(5) A/W and a large external quantum efficiencyof 5.6x10(5)%. Without the requirement of complex device structure like other avalanche PDs, our SBPD can be used as a low-cost and easy-to-integrate technology to prepare high performance solar-blind PDs.

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