Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency

Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes

(2019) X. Hai et al.   APPLIED PHYSICS LETTERS

MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

(2019) Christian Kuhn et al.   Photonics Research

Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy

(2019) A. Pandey et al.   PHYSICAL REVIEW MATERIALS

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

(2017) Carlo De Santi et al.   Photonics Research

Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures

(2016) Mehrdad Djavid et al.   APPLIED PHYSICS LETTERS

Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation

(2015) Joosun Yun et al.   Applied Physics Express

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

(2015) Shin-ichiro Inoue et al.   APPLIED PHYSICS LETTERS

Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

(2015) K. H. Li et al.   Nature Nanotechnology

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

(2014) Hideki Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

InGaN/GaN light-emitting diode with a polarization tunnel junction

(2013) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

(2012) Brendan Gunning et al.   APPLIED PHYSICS LETTERS

Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

(2012) Guan-Bo Lin et al.   APPLIED PHYSICS LETTERS

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes

(2012) Peng Zhao et al.   OPTICS EXPRESS

Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes

(2012) Peng Zhao et al.   Optical Materials Express

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

(2011) Kazuhito Ban et al.   Applied Physics Express

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

(2010) Hideki Hirayama et al.   Applied Physics Express

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

(2010) W. Sun et al.   APPLIED PHYSICS LETTERS

Photonic crystal LEDs - designing light extraction

(2009) C. Wiesmann et al.   Laser & Photonics Reviews

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

(2009) Jonathan J. Wierer et al.   Nature Photonics

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal

(2008) Min-Ki Kwon et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics