AlN metal–semiconductor field-effect transistors using Si-ion implantation

Published 2018 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
AlN metal–semiconductor field-effect transistors using Si-ion implantation
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 4S, Pages 04FR11
Publisher
Japan Society of Applied Physics
Online
2018-03-06
DOI
10.7567/jjap.57.04fr11

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.