High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes

Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes

(2019) X. Hai et al.   APPLIED PHYSICS LETTERS

Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm

(2019) Martin Guttmann et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

(2019) Christian Kuhn et al.   Photonics Research

Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy

(2019) A. Pandey et al.   PHYSICAL REVIEW MATERIALS

Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

(2019) V. Fan Arcara et al.   JOURNAL OF APPLIED PHYSICS

Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

(2018) Evan A. Clinton et al.   APPLIED PHYSICS LETTERS

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

(2018) Norman Susilo et al.   APPLIED PHYSICS LETTERS

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Improving the Efficiency of AlGaN Deep-UV LEDs by Using Highly Reflective Ni/Al p-Type Electrodes

(2018) Noritoshi Maeda et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy

(2018) Xianhe Liu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

(2018) Felix Nippert et al.   APPLIED PHYSICS LETTERS

Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

(2017) Guo-Dong Hao et al.   OPTICS EXPRESS

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

(2016) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

(2016) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures

(2016) Mehrdad Djavid et al.   APPLIED PHYSICS LETTERS

Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance

(2016) Fatih Akyol et al.   APPLIED PHYSICS LETTERS

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

(2015) Shin-ichiro Inoue et al.   APPLIED PHYSICS LETTERS

III-Nitride nanowire optoelectronics

(2015) Songrui Zhao et al.   PROGRESS IN QUANTUM ELECTRONICS

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

(2014) M. Auf der Maur et al.   APPLIED PHYSICS LETTERS

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

(2014) Hideki Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

(2014) Sergey Karpov   OPTICAL AND QUANTUM ELECTRONICS

InGaN/GaN light-emitting diode with a polarization tunnel junction

(2013) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

(2013) Peng Dong et al.   APPLIED PHYSICS LETTERS

Efficiency droop in light-emitting diodes: Challenges and countermeasures

(2013) Jaehee Cho et al.   Laser & Photonics Reviews

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

(2012) J. E. Northrup et al.   APPLIED PHYSICS LETTERS

Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

(2012) Guan-Bo Lin et al.   APPLIED PHYSICS LETTERS

Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes

(2012) Peng Zhao et al.   Optical Materials Express

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

(2011) Yitao Liao et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Polarization-engineered GaN/InGaN/GaN tunnel diodes

(2010) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

(2010) W. Sun et al.   APPLIED PHYSICS LETTERS

Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

(2010) C. Bayram et al.   APPLIED PHYSICS LETTERS

Reduction in the Efficiency-Droop Effect of InGaN Green Light-Emitting Diodes Using Gradual Quantum Wells

(2010) Ya-Ju Lee et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes in water disinfection

(2009) Sari Vilhunen et al.   ENVIRONMENTAL SCIENCE AND POLLUTION RESEARCH

Deep-Ultraviolet Light-Emitting Diodes

(2009) Michael S. Shur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

(2009) John Simon et al.   PHYSICAL REVIEW LETTERS

Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes

(2008) J. C. Zhang et al.   APPLIED PHYSICS LETTERS