β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm

Published 2021 View Full Article

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Title
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 6, Pages 899-902
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-04-10
DOI
10.1109/led.2021.3072052

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