Journal
NANOSCALE RESEARCH LETTERS
Volume 13, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-018-2539-9
Keywords
DUV LED; Superlattice p-EBL; Hole injection; Electron leakage; Efficiency-droop-free
Funding
- National Natural Science Foundation of China [51502074, 61604051]
- Natural Science Foundation of Hebei Province [F2017202052]
- Natural Science Foundation of Tianjin City [16JCYBJC16200]
- Program for Top 100 Innovative Talents in Colleges and Universities of Hebei Province [SLRC2017032]
- Program for 100-Talent-Plan of Hebei Province [E2016100010]
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This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.
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