Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 11, Pages 1748-1751Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2942967
Keywords
MESFETs; Diamond; Logic gates; Boron; Schottky diodes; MOSFET; Surface morphology; Diamond; boron-doped; MESFET
Categories
Funding
- KAKENHI Projects, MEXT, Japan [JP18K13806, JP16H06419, JP16H06326, JP19H02617]
- Leading Initiative for Excellent Young Researchers Program Project, MEXT, Japan
- MEXT, Japan
- Murata Science Foundation
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Schottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm(-2) with the on/off ratio higher than 10(8). Ideality factor and barrier height for Pt metal on the boron-doped diamond are evaluated to be 1.07 and 1.38 eV, respectively. Drain current maximum for the MESFET is -0.55mA mm(-1), which is nine times higher than that of the previous report. Origin of it is possibly attributed to the good surface quality and high boron concentration for the B-diamond.
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