4.6 Article

Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO

Journal

OPTICS EXPRESS
Volume 23, Issue 25, Pages 32329-32336

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.23.032329

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Funding

  1. National Basic Research Program of China (973 Program) [2011CB302006, 2011CB302002]
  2. National Natural Science Foundation of China [11134009, 61376054, 61425021, 61525404]
  3. 100 Talents Program of the Chinese Academy of Sciences

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A larger ratio of conduction-band offset to valence-band offset is the unique character for MgxZn1-xO alloys. For this reason, it is feasible to build a quasi-electric forces, caused by the spatial gradient of the conduction edge, exerting on the electrons. In this paper, a novel graded band gap cubic-MgZnO-based solar-blind photodetector is successfully fabricated from Graded-Band-Gap-Cubic-MgZnO/i-MgO/p-Si heterojunction, via changing stoichiometry spatial gradient. Due to quasi-electric fields in non-uniform MgZnO, the multiple carriers are generated under ultra-low threshold bias voltage. The photodetector showed high performance, namely, high responsivity, quantum efficiency, high sensitivity and selectivity towards the solar-blind spectrum, and fast response times. (C) 2015 Optical Society of America

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