4.6 Article

Oxygen annealing impact on β-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

Journal

APPLIED PHYSICS LETTERS
Volume 117, Issue 13, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/5.0021242

Keywords

-

Funding

  1. Outstanding Youth Science Foundation of Heibei Province [F2019516004]
  2. National Key Research and Development Program [2016YFB0400100]
  3. National Key Science & Technology Special Project [2017ZX01001301]
  4. National Natural Science Foundation of China [11435010, 61474086]
  5. Natural Science Basic Research Program of Shanxi [2016ZDJC-02]

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In this Letter, we present direct current (DC), small signal radio frequency (RF), and large signals with pulsed and continuous wave (CW) studies and characterization on oxygen annealed (OA) beta-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with significantly improved CW output power density (P-out) when compared to other beta-Ga2O3 RF devices. The OA process is found to be useful in compensating and neutralizing the donors in the unintentionally doped (UID) buffer layer and, hence, suppressing a second depletion effect in this UID layer. The device demonstrates a peak DC drain current of 200mA/mm, a transconductance of 11 mS/mm, and an on/off ratio of 10(9). Small-signal RF characterization indicates a cut-off frequency and maximum oscillation frequency (f(T)/f(max)) of 1.8GHz and 4.2GHz, respectively. The device also shows an output power (P-out)/peak power added efficiency (PAE)/gain of 0.4W/mm/10%/3.2dB and 0.43W/mm/12%/3.6dB for CW and pulsed signals, respectively, at an operation frequency of 1GHz.

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