Journal
IEEE PHOTONICS JOURNAL
Volume 11, Issue 3, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2019.2914146
Keywords
AlGaN; ultraviolet; avalanche photodiodes; multiplication scaling
Funding
- National Key R&D Program of China [2016YFB0400903]
- National Nature Science Foundation of China (NSFC) [61634002]
- National Natural Science Foundation Committee of China Academy of Engineering Physics Joint Fund (NSAF) [U1830109]
- Key R&D Project of Jiangsu Province, China [BE2016174]
- Natural Science Foundation of Jiangsu Province [BK20160883]
- University Science Research Project of Jiangsu Province [16KJB140011]
- Scientific Research Foundation of Graduate School of Nanjing University [2017ZDL02]
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Back-illuminated Al0.1Ga0.9N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device performance were investigated. The avalanche breakdown voltage was found to increase as the multiplication layer thickness (MLT) increases. The APD with 230-nm-MLT achieved a superior maximum multiplication gain of 5.4 x 10(4), higher than that obtained in devices with 150-nm- and 300-nm-MLT. Theoretical simulations demonstrated that the critical electric field intensity in an avalanche region would decrease as the rising of MLT, indicating the modulating ability of multiplication scaling on the AlGaN APD performance. In addition, APDs fabricated on different AlN templates were employed to study the effects of crystalline quality on device properties.
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