229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band

(2017) S. M. Sadaf et al.   NANO LETTERS

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

(2015) A. T. M. Golam Sarwar et al.   APPLIED PHYSICS LETTERS

Interband tunneling for hole injection in III-nitride ultraviolet emitters

(2015) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

(2014) Jai Verma et al.   APPLIED PHYSICS LETTERS

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

(2014) Frank Mehnke et al.   APPLIED PHYSICS LETTERS

Polarization Induced High Al Composition AlGaN p–n Junction Grown on Silicon Substrates

(2014) Peng Zhang et al.   CHINESE PHYSICS LETTERS

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

(2014) Hideki Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

(2013) Jai Verma et al.   APPLIED PHYSICS LETTERS

On the origin of the 265 nm absorption band in AlN bulk crystals

(2012) Ramón Collazo et al.   APPLIED PHYSICS LETTERS

Fast flexible electronics using transferrable silicon nanomembranes

(2012) Kan Zhang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

(2011) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

(2011) R. Dalmau et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Characterization of dislocation arrays in AlN single crystals grown by PVT

(2011) Rafael Dalmau et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

(2011) Cyril Pernot et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

(2010) Hideki Hirayama et al.   Applied Physics Express

GaN-based ultraviolet light-emitting diodes with multifinger contacts

(2010) Hernán Rodríguez et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

(2008) Hideki Hirayama et al.   Applied Physics Express