Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

(2016) Yongmin Kim et al.   ACS Applied Materials & Interfaces

Partially Fluorinated Graphene: Structural and Electrical Characterization

(2016) Lanxia Cheng et al.   ACS Applied Materials & Interfaces

Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor

(2016) Jae-Min Park et al.   ACS Applied Materials & Interfaces

Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy

(2016) Roger H. E. C. Bosch et al.   CHEMISTRY OF MATERIALS

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $I_{ON}=156~\mu \text{A}/\mu \text{m}$ at $V_{DD}= 0.5$ V and $I_{OFF}=100$ nA/$\mu \text{m}$

(2016) Vladimir Djara et al.   IEEE ELECTRON DEVICE LETTERS

Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

(2016) Antonio T. Lucero et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

(2016) Sungin Suh et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

(2016) Stephen Weeks et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

(2016) Gaudenzio Meneghesso et al.   MICROELECTRONICS RELIABILITY

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

(2016) Angelica Azcatl et al.   NANO LETTERS

Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

(2016) Luchana L. Yusup et al.   RSC Advances

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

(2016) J. Provine et al.   AIP Advances

Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers

(2015) Anne-Marije Andringa et al.   ACS Applied Materials & Interfaces

Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

(2015) Harm C. M. Knoops et al.   ACS Applied Materials & Interfaces

Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma

(2015) Rafaiel A. Ovanesyan et al.   ACS Applied Materials & Interfaces

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study

(2015) Hui Zhu et al.   ACS Applied Materials & Interfaces

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

(2015) Harm C. M. Knoops et al.   APPLIED PHYSICS LETTERS

In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As

(2015) Antonio T. Lucero et al.   Electronic Materials Letters

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

(2015) Mengyuan Hua et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN

(2015) Xiaoye Qin et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride

(2015) Chaitanya Krishna Ande et al.   Journal of Physical Chemistry Letters

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

(2015) I. Rossetto et al.   MICROELECTRONICS RELIABILITY

The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

(2015) Woochool Jang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Gate stack engineering for GaN lateral power transistors

(2015) Shu Yang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Low temperature deposition of silicon nitride using Si3Cl8

(2015) Stefan Riedel et al.   THIN SOLID FILMS

Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD

(2015) Lanxia Cheng et al.   Journal of Materials Chemistry C

Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride

(2014) Ciaran A. Murray et al.   ACS Applied Materials & Interfaces

Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone

(2014) Lanxia Cheng et al.   ACS Applied Materials & Interfaces

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks

(2014) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

A crystalline oxide passivation for Al2O3/AlGaN/GaN

(2014) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer

(2014) Woojin Choi et al.   IEEE ELECTRON DEVICE LETTERS

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$/RF-Sputtered-${\rm HfO}_{2}$

(2014) Woojin Choi et al.   IEEE ELECTRON DEVICE LETTERS

Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

(2014) Hyungjun Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Optical characteristics of nanocrystalline AlxGa1−xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

(2014) Eda Goldenberg et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

On the role of nanoporosity in controlling the performance of moisture permeation barrier layers

(2014) Alberto Perrotta et al.   MICROPOROUS AND MESOPOROUS MATERIALS

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

(2014) Woochool Jang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Density functional theory study on the full ALD process of silicon nitride thin film deposition via BDEAS or BTBAS and NH3

(2014) Liang Huang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Atomic layer deposition of ZnO: a review

(2014) Tommi Tynell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1−xN thin films at low temperatures

(2014) Cagla Ozgit-Akgun et al.   Journal of Materials Chemistry C

Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN

(2013) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

Energy-enhanced atomic layer deposition for more process and precursor versatility

(2013) S.E. Potts et al.   COORDINATION CHEMISTRY REVIEWS

Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

(2013) Sen Huang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

(2013) Xiaoye Qin et al.   JOURNAL OF APPLIED PHYSICS

Atomic layer deposition of dielectrics for carbon-based electronics

(2013) J. Kim et al.   THIN SOLID FILMS

Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration

(2013) Dina H. Triyoso et al.   ECS Journal of Solid State Science and Technology

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

(2012) Srikar Jandhyala et al.   ACS Nano

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

(2012) S. McDonnell et al.   APPLIED PHYSICS LETTERS

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

(2012) Barry Brennan et al.   APPLIED PHYSICS LETTERS

Graphene-Side-Gate Engineering

(2012) Ching-Tzu Chen et al.   IEEE ELECTRON DEVICE LETTERS

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu

(2011) Tae-Kwang Eom et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films

(2011) Pierre Morin et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

(2011) H. B. Profijt et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Plasma enhanced atomic layer deposition of SiNx:H and SiO2

(2011) Sean W. King   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks

(2011) W. Keuning et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy

(2010) Tae Joo Park et al.   APPLIED PHYSICS LETTERS

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

(2010) B. Lee et al.   APPLIED PHYSICS LETTERS

Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition

(2010) Tae-Kwang Eom et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Stress Liner Effects for 32-nm SOI MOSFETs With HKMG

(2010) Ming Cai et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

(2010) H. C. M. Knoops et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers

(2010) Wenjuan Zhu et al.   NANO LETTERS

Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

(2010) Kevin J. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Graphene for CMOS and Beyond CMOS Applications

(2010) Sanjay K. Banerjee et al.   PROCEEDINGS OF THE IEEE

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Work Function Tuning of Ti[sub x]Si[sub y]N[sub z] Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition

(2009) F. Fillot et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Initial surface reactions of atomic layer deposition

(2009) Jiyoung Kim et al.   JOM

Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone

(2009) B. Lee et al.   MICROELECTRONIC ENGINEERING

Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3

(2009) Kwangchol Park et al.   THIN SOLID FILMS

Deposition of silicon nitride thin films by hot-wire CVD at 100 °C and 250 °C

(2009) P. Alpuim et al.   THIN SOLID FILMS

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

(2008) Tohru Oka et al.   IEEE ELECTRON DEVICE LETTERS

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

(2008) M. Belyansky et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films

(2008) B. Lee et al.   MICROELECTRONIC ENGINEERING

Deposition of device quality silicon nitride with ultra high deposition rate (>7 nm/s) using hot-wire CVD

(2007) V. Verlaan et al.   THIN SOLID FILMS