AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

Published 2008 View Full Article

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Title
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 7, Pages 668-670
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-07-09
DOI
10.1109/led.2008.2000607

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