In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

(2012) S. McDonnell et al.   APPLIED PHYSICS LETTERS

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

(2012) Barry Brennan et al.   APPLIED PHYSICS LETTERS

Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

(2012) Xiang Liu et al.   JOURNAL OF ELECTRONIC MATERIALS

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

(2012) Rathnait D. Long et al.   Materials

Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al$_{2}$O$_{3}$ on Chemically Treated InP Surfaces

(2011) Barry Brennan et al.   Applied Physics Express

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics

(2011) Neeraj Nepal et al.   Applied Physics Express

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

(2011) Y.C. Chang et al.   MICROELECTRONIC ENGINEERING

In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

(2011) Prasanna Sivasubramani et al.   Physica Status Solidi-Rapid Research Letters

Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

(2010) B. Brennan et al.   JOURNAL OF APPLIED PHYSICS

High performance AlGaN/GaN power switch with HfO2 insulation

(2009) Junxia Shi et al.   APPLIED PHYSICS LETTERS

Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces

(2009) Rakesh Sohal et al.   APPLIED SURFACE SCIENCE

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Half-Cycle Atomic Layer Deposition Reaction Study Using O[sub 3] and H[sub 2]O Oxidation of Al[sub 2]O[sub 3] on In[sub 0.53]Ga[sub 0.47]As

(2009) B. Brennan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

Indium stability on InGaAs during atomic H surface cleaning

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS