Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability

(2010) C. Zhou et al.   ELECTRONICS LETTERS

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability

(2010) Chunhua Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Integrated Voltage Reference Generator for GaN Smart Power Chip Technology

(2010) King-Yuen Wong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

(2009) Wanjun Chen et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

(2009) Chunhua Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

(2009) M. J. Wang et al.   JOURNAL OF APPLIED PHYSICS

High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

(2008) Wanjun Chen et al.   APPLIED PHYSICS LETTERS

Molecular dynamics calculation of the fluorine ions’ potential energies in AlGaN/GaN heterostructures

(2008) L. Yuan et al.   JOURNAL OF APPLIED PHYSICS