Nanometre-scale electronics with III–V compound semiconductors

InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm

(2011) Ryousuke Terao et al.   Applied Physics Express

On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors

(2011) A. M. Sonnet et al.   APPLIED PHYSICS LETTERS

Defect states at III-V semiconductor oxide interfaces

(2011) L. Lin et al.   APPLIED PHYSICS LETTERS

Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator

(2011) Hui Fang et al.   APPLIED PHYSICS LETTERS

Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors

(2011) Ling Xia et al.   APPLIED PHYSICS LETTERS

The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors

(2011) George Apostolopoulos et al.   JOURNAL OF APPLIED PHYSICS

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

(2011) É. O’Connor et al.   JOURNAL OF APPLIED PHYSICS

Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

(2011) A.M. Sonnet et al.   MICROELECTRONIC ENGINEERING

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

(2011) Isabelle Ferain et al.   NATURE

Fluorinated HfO2 gate dielectric engineering on In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

(2010) Yen-Ting Chen et al.   APPLIED PHYSICS LETTERS

Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition

(2010) Yiqun Liu et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

(2010) Leonardo Gomez et al.   IEEE ELECTRON DEVICE LETTERS

30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

(2010) Dae-Hyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications

(2010) Matthias Passlack et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO

(2010) Weichao Wang et al.   JOURNAL OF APPLIED PHYSICS

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

(2010) Weichao Wang et al.   Journal of Physical Chemistry C

Vertical InAs Nanowire Wrap Gate Transistors withft> 7 GHz andfmax> 20 GHz

(2010) M. Egard et al.   NANO LETTERS

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

(2010) Hyunhyub Ko et al.   NATURE

In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

(2010) Thomas N. Theis et al.   PROCEEDINGS OF THE IEEE

High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

(2009) Hiroyuki Ishii et al.   Applied Physics Express

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface

(2009) M. Scarrozza et al.   APPLIED PHYSICS LETTERS

Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With In Situ Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs

(2009) Hock-Chun Chin et al.   IEEE ELECTRON DEVICE LETTERS

On Backscattering and Mobility in Nanoscale Silicon MOSFETs

(2009) Changwook Jeong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Self-Aligned InGaAs HEMT Architecture for Logic Applications

(2009) Niamh Waldron et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Roadmap for 22nm and beyond (Invited Paper)

(2009) H. Iwai   MICROELECTRONIC ENGINEERING

Ultralow resistance in situ Ohmic contacts to InGaAs/InP

(2008) Uttam Singisetti et al.   APPLIED PHYSICS LETTERS

Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

(2008) Y. Q. Wu et al.   APPLIED PHYSICS LETTERS

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

(2008) Ning Li et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

MOSFET Performance Scaling—Part I: Historical Trends

(2008) Ali Khakifirooz et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

(2008) Brian R. Bennett et al.   JOURNAL OF CRYSTAL GROWTH

MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs

(2008) V. Umansky et al.   JOURNAL OF CRYSTAL GROWTH