Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution

(2011) S. McDonnell et al.   APPLIED SURFACE SCIENCE

Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

(2011) R. D. Long et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Surface reactions of TiCl4 and Al(CH3)3 on GaAs(100) during the first half-cycle of atomic layer deposition

(2011) Bernal Granados-Alpizar et al.   SURFACE SCIENCE

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

(2010) A. O’Mahony et al.   APPLIED PHYSICS LETTERS

The effect of graphite surface condition on the composition of Al2O3 by atomic layer deposition

(2010) A. Pirkle et al.   APPLIED PHYSICS LETTERS

Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition

(2010) Y. S. Kang et al.   APPLIED PHYSICS LETTERS

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

(2010) Rahul Suri et al.   APPLIED PHYSICS LETTERS

Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

(2010) B. Brennan et al.   APPLIED SURFACE SCIENCE

Effect of Using Chemical Vapor Deposition WSi[sub 2] and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors

(2010) B. S. Ong et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

(2010) B. Brennan et al.   JOURNAL OF APPLIED PHYSICS

Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces

(2010) Theodosia Gougousi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Half-Cycle Atomic Layer Deposition Reaction Study Using O[sub 3] and H[sub 2]O Oxidation of Al[sub 2]O[sub 3] on In[sub 0.53]Ga[sub 0.47]As

(2009) B. Brennan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

(2009) L. Lamagna et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al[sub 2]O[sub 3] gate dielectric

(2009) Domingo I. Garcia-Gutierrez et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces

(2009) Theodosia Gougousi et al.   THIN SOLID FILMS

Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

(2008) Justin C. Hackley et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al[sub 2]O[sub 3] on InSb

(2008) C. H. Hou et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY