Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

In situ studies of Al2O3 and HfO2 dielectrics on graphite

(2009) Adam Pirkle et al.   APPLIED PHYSICS LETTERS

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

(2009) Seyoung Kim et al.   APPLIED PHYSICS LETTERS

Ozone Adsorption on Graphene: Ab Initio Study and Experimental Validation

(2009) Geunsik Lee et al.   Journal of Physical Chemistry C

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

(2009) Damon B. Farmer et al.   NANO LETTERS

Evidence for Klein Tunneling in Graphenep−nJunctions

(2009) N. Stander et al.   PHYSICAL REVIEW LETTERS

Fabrication of graphene p-n-p junctions with contactless top gates

(2008) Gang Liu et al.   APPLIED PHYSICS LETTERS

Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

(2008) Bongki Lee et al.   APPLIED PHYSICS LETTERS

Top-gated graphene field-effect-transistors formed by decomposition of SiC

(2008) Y. Q. Wu et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

(2008) Xinran Wang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping

(2008) Li Liu et al.   NANO LETTERS

Raman spectroscopy and imaging of graphene

(2008) Zhenhua Ni et al.   Nano Research

Current saturation in zero-bandgap, top-gated graphene field-effect transistors

(2008) Inanc Meric et al.   Nature Nanotechnology