A crystalline oxide passivation for Al2O3/AlGaN/GaN

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks

(2014) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

(2014) Angelica Azcatl et al.   APPLIED PHYSICS LETTERS

Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN

(2013) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

(2013) D. M. Zhernokletov et al.   APPLIED PHYSICS LETTERS

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

(2013) Shu Yang et al.   IEEE ELECTRON DEVICE LETTERS

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

(2013) Derek W. Johnson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2013) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

(2013) Xiaoye Qin et al.   JOURNAL OF APPLIED PHYSICS

Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

(2012) S. McDonnell et al.   APPLIED PHYSICS LETTERS

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

(2012) Barry Brennan et al.   APPLIED PHYSICS LETTERS

Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

(2012) Junwoo Son et al.   APPLIED PHYSICS LETTERS

Heteroepitaxy of La2O3 and La2–xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

(2012) Xinwei Wang et al.   NANO LETTERS

Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

(2011) Sen Huang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

(2011) M. P. J. Punkkinen et al.   PHYSICAL REVIEW B

Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

(2010) B. Brennan et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

(2010) M. Fagerlind et al.   JOURNAL OF APPLIED PHYSICS

Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures

(2010) M. S. Miao et al.   JOURNAL OF APPLIED PHYSICS

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

(2009) O.I. Saadat et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

(2009) Masafumi Tajima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

(2008) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride

(2008) Z. L. Fang et al.   Journal of Physical Chemistry C

An InGaN/GaN single quantum well improved by surface modification of GaN films

(2008) Z L Fang et al.   NANOTECHNOLOGY