In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

(2011) R. R. Pelá et al.   APPLIED PHYSICS LETTERS

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

(2011) C.L. Hinkle et al.   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ \hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulators

(2011) A. L. Corrion et al.   IEEE ELECTRON DEVICE LETTERS

Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG

(2011) Tongde Huang et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance GaN MOSFET With High-$\kappa$$\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate Dielectric

(2011) C. Y. Tsai et al.   IEEE ELECTRON DEVICE LETTERS

In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

(2011) Prasanna Sivasubramani et al.   Physica Status Solidi-Rapid Research Letters

Surface roughness scattering in two dimensional electron gas channel

(2010) B. Liu et al.   APPLIED PHYSICS LETTERS

Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

(2010) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission

(2010) B. Brennan et al.   JOURNAL OF APPLIED PHYSICS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces

(2009) Rakesh Sohal et al.   APPLIED SURFACE SCIENCE

Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

(2008) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

(2008) Marcin Miczek et al.   JOURNAL OF APPLIED PHYSICS