In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As

Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition

(2014) Young-Chul Byun et al.   ACS Applied Materials & Interfaces

Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities

(2014) Varistha Chobpattana et al.   APPLIED PHYSICS LETTERS

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

(2014) R. V. Galatage et al.   JOURNAL OF APPLIED PHYSICS

Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors

(2011) Ling Xia et al.   APPLIED PHYSICS LETTERS

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

(2011) C.L. Hinkle et al.   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

Defect gap states on III–V semiconductor–oxide interfaces (invited)

(2011) J. Robertson et al.   MICROELECTRONIC ENGINEERING

Surface Defects and Passivation of Ge and III–V Interfaces

(2011) Michel Houssa et al.   MRS BULLETIN

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

An in situ examination of atomic layer deposited alumina/InAs(100) interfaces

(2010) A. P. Kirk et al.   APPLIED PHYSICS LETTERS

Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

(2010) C. Marchiori et al.   APPLIED PHYSICS LETTERS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Surface passivation and implications on high mobility channel performance (Invited Paper)

(2009) C.L. Hinkle et al.   MICROELECTRONIC ENGINEERING

Fundamentals of zinc oxide as a semiconductor

(2009) Anderson Janotti et al.   REPORTS ON PROGRESS IN PHYSICS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A