A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks

(2014) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

A crystalline oxide passivation for Al2O3/AlGaN/GaN

(2014) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

Evidence of Fowler–Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature

(2014) Sreenidhi Turuvekere et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

(2014) Zenji Yatabe et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

(2014) M. Ťapajna et al.   JOURNAL OF APPLIED PHYSICS

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

(2013) Stephen McDonnell et al.   ACS Nano

Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN

(2013) Xiaoye Qin et al.   APPLIED PHYSICS LETTERS

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

(2013) Yuhao Zhang et al.   APPLIED PHYSICS LETTERS

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

(2013) Ting-Hsiang Hung et al.   APPLIED PHYSICS LETTERS

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

(2013) Shu Yang et al.   IEEE ELECTRON DEVICE LETTERS

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

(2013) Sreenidhi Turuvekere et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of Electron Density on Extreme Ultraviolet Output of a Z-Pinch Xe Discharge Produced Plasma Source

(2013) Bin Huang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2013) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

(2013) Xiaoye Qin et al.   JOURNAL OF APPLIED PHYSICS

Enhanced leakage current properties of HfO2/GaN gate dielectric stack by introducing an ultrathin buffer layer

(2013) Zhen Jie Tang et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Electronic surface and dielectric interface states on GaN and AlGaN

(2013) Brianna S. Eller et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

(2012) Hong-An Shih et al.   APPLIED PHYSICS LETTERS

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

(2012) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

(2012) Barry Brennan et al.   APPLIED PHYSICS LETTERS

Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

(2012) Junwoo Son et al.   APPLIED PHYSICS LETTERS

Study of the effect of thermal annealing on high k hafnium oxide thin film structure and electrical properties of MOS and MIM devices

(2010) A. Srivastava et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS