Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Published 2016 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
Authors
Keywords
Gallium nitride, HEMT, Trapping, Defect, Degradation, Breakdown
Journal
MICROELECTRONICS RELIABILITY
Volume 58, Issue -, Pages 151-157
Publisher
Elsevier BV
Online
2015-12-05
DOI
10.1016/j.microrel.2015.11.024

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.