Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer

Authors

Keywords

Journal

Volume 35, Issue 1, Pages 30-32

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2014-01-04

DOI

10.1109/led.2013.2291551

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