Stress Liner Effects for 32-nm SOI MOSFETs With HKMG

Title
Stress Liner Effects for 32-nm SOI MOSFETs With HKMG
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 7, Pages 1706-1709
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-05-28
DOI
10.1109/ted.2010.2049076

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search