Recent progress on the electronic structure, defect, and doping properties of Ga2O3
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Title
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
Authors
Keywords
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Journal
APL Materials
Volume 8, Issue 2, Pages 020906
Publisher
AIP Publishing
Online
2020-02-21
DOI
10.1063/1.5142999
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- High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Orientedβ-Ga2O3Nanobelts
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- ComprehensiveAb InitioStudy of Doping in Bulk ZnO with Group-V Elements
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- The Impacts of Cation Stoichiometry and Substrate Surface Quality on Nucleation, Structure, Defect Formation, and Intermixing in Complex Oxide Heteroepitaxy-LaCrO3on SrTiO3(001)
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- Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
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- Structural, electronic and energetic properties of GaN[0001]/Ga2O3[100] heterojunctions: A first-principles density functional theory study
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- Generalized Koopmans density functional calculations reveal the deep acceptor state ofNOin ZnO
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- Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing
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- Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111)
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- Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application
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- Hydrogen interactions with acceptor impurities inSnO2: First-principles calculations
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- Surface transfer doping of semiconductors
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- Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates
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- p-channel thin-film transistor using p-type oxide semiconductor, SnO
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- Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
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- Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals
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- Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
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- Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition
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- Defect energetics in ZnO: A hybrid Hartree-Fock density functional study
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- Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy
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- Surface Electron Accumulation and the Charge Neutrality Level inIn2O3
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- Sources of Electrical Conductivity inSnO2
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- Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy
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- Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing
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