Electrical and optical characterizations of beta-Ga2O3: Sn films deposited on MgO(110) substrate by MOCVD

Tin-doped beta-Ga2O3 (beta-Ga2O3: Sn) films doped with different tin concentrations were deposited on MgO (110) substrates by metal organic chemical vapor deposition (MOCVD) at 700 degrees C. The effect of doping on the structural, electrical and optical properties of the films was investigated. The 10% Sn-doped film exhibited the best electrical conductivity properties with the lowest resistivity about 5.21 x 10(-2) Omega cm, which is over ten orders of magnitude lower than the un-doped film. Micro-structural analysis revealed that the film with 10% Sn content had a clear in-plane relationship of beta-Ga2O3 (100) parallel to MgO (110) with beta-Ga2O3 ((2) over bar 01) parallel to MgO (111). The average transmittance of the samples in the visible range exceeded 87% and the optical band gap of the films varied from 4.12 to 4.80 eV.